Zobrazeno 1 - 10
of 215
pro vyhledávání: '"gallium arsenides"'
Monte Carlo simulation of the radiation transport in chromium compensated gallium arsenide detectors
Autor:
A. Leyva Fabelo, J. A. Rubiera Gimeno, D. Leyva Pernía, I. Piñera Hernández, A. Meneses, A. S. Zhemchugov, G. A. Chelkov, C. M. Cruz Inclán
Publikováno v:
Nucleus, Vol 0, Iss 64 (2019)
Some results obtained with the use of Monte Carlo mathematical simulation of radiation transport in Timepix hybrid detectors based on chromium compensated gallium arsenide are presented in this contribution. The MCNPX, GEANT4, SRIM and MCCM code syst
Externí odkaz:
https://doaj.org/article/ed34b0f9123d4a9caffda2f5da0bb13d
Publikováno v:
Chimica Techno Acta, Vol 2, Iss 1, Pp 78-87 (2015)
Chimica Techno Acta; Том 2, № 1 (2015); 78-87
Chimica Techno Acta; Том 2, № 1 (2015); 78-87
In this work the study of the stability nanochips GaAs / GaAsxNy / GaN is presented. For the calculation of parameters used quantum-chemical and thermodynamic approaches. The calculations of the surface free energy nanochips within the models used sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0f0736eb8ae49e8362fe81da6d76155
https://journals.urfu.ru/index.php/chimtech/article/view/1100
https://journals.urfu.ru/index.php/chimtech/article/view/1100
Publikováno v:
Chimica Techno Acta; Том 2, № 1 (2015); 66-77
Chimica Techno Acta, Vol 2, Iss 1, Pp 66-77 (2015)
Chimica Techno Acta, Vol 2, Iss 1, Pp 66-77 (2015)
In this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b966dc409686d2d8e2753beac91c98e9
https://journals.urfu.ru/index.php/chimtech/article/view/1099
https://journals.urfu.ru/index.php/chimtech/article/view/1099
Autor:
S. R. Jin, C. N. Ahmad, Yves Rouillard, Abdelmajid Salhi, K. O'Brien, B. N. Murdin, Stephen J. Sweeney, Alfred R. Adams, A. Joullié
Publikováno v:
physica status solidi (b)
physica status solidi (b), Wiley, 2007, 244 (1), pp.203-207. ⟨10.1002/pssb.200672573⟩
physica status solidi (b), Wiley, 2007, 244 (1), pp.203-207. ⟨10.1002/pssb.200672573⟩
International audience; Hydrostatic pressure and spontaneous emission techniques have been used to examine the important recombination mechanisms in type-I GaInAsSb/GaSb quantum well lasers. High pressure results indicate that Auger recombination dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8f0995d09186853a481d97286708045
https://doi.org/10.1002/pssb.200672573
https://doi.org/10.1002/pssb.200672573
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 80:5449-5453
We use a two-dimensional, drift-diffusion calculation to illustrate the physics behind the recently described GaAs metal–semiconductor–metal photodetector with an ohmic backgate provided by a p-doped layer. We calculate the transient response of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d46b609674721bb2f11c2ad290b68075
https://doi.org/10.1063/1.362733
https://doi.org/10.1063/1.362733
Publikováno v:
Journal of Applied Physics. 79:2640-2648
We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f708717abe7b379cc7e70a1c520b4fa
https://doi.org/10.1063/1.361134
https://doi.org/10.1063/1.361134
Publikováno v:
Journal of Applied Physics. 79:1772-1778
We have studied the low‐temperature coplanar photoconductivity under pulsed and continuous illumination of n‐InSb/GaAs heterostructures grown by metalorganic magnetron sputtering. The large lattice mismatch and the large difference in band gaps g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ee23167215d8a52b751bf5b5539b293
https://doi.org/10.1063/1.360967
https://doi.org/10.1063/1.360967
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 79:1578-1582
A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insulator does not always behave like a normal insulator because of so-called bias voltage propagation, which arises from space charge in the deep trap. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad788c75a0d796f5cb9302ce9ed9d67
https://doi.org/10.1063/1.361001
https://doi.org/10.1063/1.361001
Autor:
W. R. McKinnon, C. M. Hurd
Publikováno v:
Journal of Applied Physics. 78:5756-5764
A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41c823a0bbc1ef1f5b7e8f75d7e76690
https://doi.org/10.1063/1.359638
https://doi.org/10.1063/1.359638
Autor:
Wei, Jean W.
Publikováno v:
Theses and Dissertations
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::b111ab04805a2d110a9ba8e220e8421d
https://scholar.afit.edu/etd/1479
https://scholar.afit.edu/etd/1479