Zobrazeno 1 - 6
of 6
pro vyhledávání: '"frequency 100.0 kHz"'
Publikováno v:
The Journal of Engineering (2019)
The diode is used as the detection unit to receive the millimetre-wave signal directly. A circuit is made with an operational amplifier OP27 to amplify the signal. The magnification of the OP27 circuit is stable at 100
Externí odkaz:
https://doaj.org/article/080cc5f4d48c420d88be537fb5c37b3b
Design of a 100 kHz wide bandgap inverter for motor applications with active damped sine wave filter
Publikováno v:
The Journal of Engineering (2019)
In this study, a three-phase motor inverter with sinusoidal output voltages based on the application of gallium nitride transistors and advanced control is analysed. In comparison to standard silicon-insulated gate bipolar transistors much higher fea
Externí odkaz:
https://doaj.org/article/3bbaa01750ad4747bac0e342d6baab8e
Publikováno v:
The Journal of Engineering (2018)
As the development of switching power and power factor correction (PFC) technology in electronic devices, there is strong transient current rate and electromagnetic interference (EMI) noise caused by switching power supply MOSFET, IGBT, and other sem
Externí odkaz:
https://doaj.org/article/88d8b15a29124e8d94443c26044f54c2
Design of a 100 kHz wide bandgap inverter for motor applications with active damped sine wave filter
Publikováno v:
The Journal of Engineering (2019)
In this study, a three-phase motor inverter with sinusoidal output voltages based on the application of gallium nitride transistors and advanced control is analysed. In comparison to standard silicon-insulated gate bipolar transistors much higher fea
Publikováno v:
The Journal of Engineering (2019)
The diode is used as the detection unit to receive the millimetre-wave signal directly. A circuit is made with an operational amplifier OP27 to amplify the signal. The magnification of the OP27 circuit is stable at 100
Publikováno v:
The Journal of Engineering (2018)
As the development of switching power and power factor correction (PFC) technology in electronic devices, there is strong transient current rate and electromagnetic interference (EMI) noise caused by switching power supply MOSFET, IGBT, and other sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4a42c5da1cc918bbf41fe64ce2bfe6d
https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8894
https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8894