Zobrazeno 1 - 10
of 7 526
pro vyhledávání: '"finfet"'
Autor:
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized cha
Externí odkaz:
https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49
Publikováno v:
Micro and Nano Engineering, Vol 24, Iss , Pp 100275- (2024)
Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage. While operating as a SET, charge on a
Externí odkaz:
https://doaj.org/article/0feec18281974fae86744131e83f04bc
Autor:
Priyanka Agrwal, Ajay Kumar
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 8, Iss , Pp 100117- (2024)
In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gain
Externí odkaz:
https://doaj.org/article/098d4c0ccddf4fcc9dddf4522a97b664
Akademický článek
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Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 8, Iss , Pp 100539- (2024)
Currently, memory occupies nearly eighty-five percent of the allocated chip area. Integrated electronics, such as workstations and mobile gadgets, need quick memory systems that use low power. Scaling issues make it impossible to obtain low-power and
Externí odkaz:
https://doaj.org/article/91ad184a4ca543188a3f3246b6c25941
Publikováno v:
مهندسی مخابرات جنوب, Vol 11, Iss 44, Pp 9-18 (2024)
In the present study, a new low-power and high-speed comparator circuit is designed in 65 nm fin field-effect transistor (FinFET) technology. Moreover, by properly using the capabilities of FinFET technology, the number of transistors is reduced, and
Externí odkaz:
https://doaj.org/article/ca778d2fc2b14f2997c9bdf1ccb28c6e
Autor:
Anirban Kar, Shivendra Singh Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 415-425 (2024)
Modern System-on-Chip (SoC) architectures necessitate low-voltage (LV) core transistors featuring excellent digital, analog, and radio frequency (RF) properties, as well as thick oxide transistors serving as robust I/O buffers and high-voltage (HV) t
Externí odkaz:
https://doaj.org/article/f45b6ac8e5a44647ae9a64a8e8655ead
Autor:
Hsin-Cheng Lin, Wei-Teng Hsu, Tsai-Yu Chung, He-Wen Shen, Ching-Wang Yao, Tao Chou, Li-Kai Wang, C. W. Liu
Publikováno v:
IEEE Access, Vol 12, Pp 70512-70518 (2024)
RF array performance of stacked nanosheets, stacked nanowires, FinFETs, and TreeFETs are optimized using double-sided gate contact, contact over active-gate, and proposed hybrid layouts. For the double-sided gate contact, gate resistance increases wi
Externí odkaz:
https://doaj.org/article/00020ee135574e18b0b6ad5b077b0d52
Autor:
Qamar-Ud-Din Memon, Saif Ur Rehman, Muhammad Adil Bashir, Noor Muhammad Memon, Mohd Anul Haq, Sultan Alharby, Ahmed Alhussen, Ateeq Ur Rehman
Publikováno v:
IEEE Access, Vol 12, Pp 14238-14247 (2024)
This paper discusses the alternating-current (AC) and direct-current (DC) characteristics of Trigate FinFETs. A modified non linear DC model is proposed to predict $I-V$ characteristics with effect of an efficient technique for the extraction of AC s
Externí odkaz:
https://doaj.org/article/22c221870317442b87ee9a0d67582582
Autor:
I. Munavar Sheriff, R. Sakthivel
Publikováno v:
IEEE Access, Vol 12, Pp 11653-11663 (2024)
The performance of semiconductors has greatly improved due to the miniaturization of the transistor. To shrink the size of a transistor, the channel length must be decreased. Short-channel effects become noticeable as the gate length is reduced. Shor
Externí odkaz:
https://doaj.org/article/0b570249f28a4b5786705605e49ec311