Zobrazeno 1 - 10
of 7 614
pro vyhledávání: '"finFET"'
Publikováno v:
Elektronika ir Elektrotechnika, Vol 30, Iss 5, Pp 38-44 (2024)
This paper presents high-frequency universal filter applications based on a voltage differential buffered amplifier (VDBA) using 32 nm fin field effect transistor (FinFET) technology. FinFET technology is a promising alternative to complementary meta
Externí odkaz:
https://doaj.org/article/a6e641db2e6d4dadac9580a912ec15fa
Autor:
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized cha
Externí odkaz:
https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49
Autor:
Priyanka Agrwal, Ajay Kumar
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 8, Iss , Pp 100117- (2024)
In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gain
Externí odkaz:
https://doaj.org/article/098d4c0ccddf4fcc9dddf4522a97b664
Publikováno v:
IEEE Access, Vol 12, Pp 163444-163451 (2024)
Despite advancements in mitigating the short channel effect using high-k materials, multi-gate structures, and silicon-germanium (SiGe) alloys in three-dimensional FinFETs, performance trade-offs remain. This study introduces a novel machine learning
Externí odkaz:
https://doaj.org/article/3bf3f29b843848dd949ecbb9a289faef
Akademický článek
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Publikováno v:
Micro and Nano Engineering, Vol 24, Iss , Pp 100275- (2024)
Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage. While operating as a SET, charge on a
Externí odkaz:
https://doaj.org/article/0feec18281974fae86744131e83f04bc
Publikováno v:
مهندسی مخابرات جنوب, Vol 11, Iss 44, Pp 9-18 (2024)
In the present study, a new low-power and high-speed comparator circuit is designed in 65 nm fin field-effect transistor (FinFET) technology. Moreover, by properly using the capabilities of FinFET technology, the number of transistors is reduced, and
Externí odkaz:
https://doaj.org/article/ca778d2fc2b14f2997c9bdf1ccb28c6e
Autor:
Anirban Kar, Shivendra Singh Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 415-425 (2024)
Modern System-on-Chip (SoC) architectures necessitate low-voltage (LV) core transistors featuring excellent digital, analog, and radio frequency (RF) properties, as well as thick oxide transistors serving as robust I/O buffers and high-voltage (HV) t
Externí odkaz:
https://doaj.org/article/f45b6ac8e5a44647ae9a64a8e8655ead
Autor:
Hsin-Cheng Lin, Wei-Teng Hsu, Tsai-Yu Chung, He-Wen Shen, Ching-Wang Yao, Tao Chou, Li-Kai Wang, C. W. Liu
Publikováno v:
IEEE Access, Vol 12, Pp 70512-70518 (2024)
RF array performance of stacked nanosheets, stacked nanowires, FinFETs, and TreeFETs are optimized using double-sided gate contact, contact over active-gate, and proposed hybrid layouts. For the double-sided gate contact, gate resistance increases wi
Externí odkaz:
https://doaj.org/article/00020ee135574e18b0b6ad5b077b0d52
Autor:
Qamar-Ud-Din Memon, Saif Ur Rehman, Muhammad Adil Bashir, Noor Muhammad Memon, Mohd Anul Haq, Sultan Alharby, Ahmed Alhussen, Ateeq Ur Rehman
Publikováno v:
IEEE Access, Vol 12, Pp 14238-14247 (2024)
This paper discusses the alternating-current (AC) and direct-current (DC) characteristics of Trigate FinFETs. A modified non linear DC model is proposed to predict $I-V$ characteristics with effect of an efficient technique for the extraction of AC s
Externí odkaz:
https://doaj.org/article/22c221870317442b87ee9a0d67582582