Zobrazeno 1 - 10
of 67 521
pro vyhledávání: '"field-effect transistor"'
Autor:
Wang, Labin1,2 (AUTHOR), He, Yunhan1,2 (AUTHOR) heyunhan@foxmail.com, Xu, Yun1,2 (AUTHOR), Fan, Li1,2 (AUTHOR), Xiang, Junhua2 (AUTHOR), Wang, Gang (AUTHOR) gwang@usst.edu.cn
Publikováno v:
International Journal of Aerospace Engineering. 6/12/2024, Vol. 2024, p1-13. 13p.
Autor:
Ataseven, Ismail1,2 (AUTHOR) iataseven@aselsan.com.tr, Sahin, Ilker1 (AUTHOR), Ozturk, Salih Baris2 (AUTHOR)
Publikováno v:
Energies (19961073). Mar2023, Vol. 16 Issue 6, p2903. 18p.
Autor:
Mu, Shuzheng1 (AUTHOR), Chan, Pak Kwong1 (AUTHOR) epkchan@ntu.edu.sg
Publikováno v:
Sensors (14248220). Dec2022, Vol. 22 Issue 23, p9466. 20p.
Publikováno v:
Science. 11/18/2022, Vol. 378 Issue 6621, p726-732. 7p. 5 Color Photographs, 1 Chart.
Autor:
Tetseo, Menuvolu1 (AUTHOR) Menuvolutetseo@gmail.com, Gogoi, Kalpana1 (AUTHOR), Kumar, Shashi2 (AUTHOR), Kumar, Gaurav1 (AUTHOR), Rangababu, Peesapati1 (AUTHOR), Singh, Akhilrendra Pratap3 (AUTHOR), Rathore, Pradeep Kumar1 (AUTHOR)
Publikováno v:
Microsystem Technologies. Mar2024, Vol. 30 Issue 3, p263-275. 13p.
Autor:
Zhang, Haochen1,2 (AUTHOR), Zhang, Zuojun1 (AUTHOR), Ma, Xiaoliang1 (AUTHOR), Huang, Cheng1 (AUTHOR), Pu, Mingbo1,3 (AUTHOR), Luo, Jun1 (AUTHOR), Zhang, Xu1 (AUTHOR), Xiong, Qi1 (AUTHOR), Wang, Yanxun4 (AUTHOR), Luo, Xiangang1 (AUTHOR) lxg@ioe.ac.cn
Publikováno v:
Advanced Optical Materials. 2/2/2024, Vol. 12 Issue 4, p1-9. 9p.
Autor:
Srivastava, Pushkar1 (AUTHOR), Sharma, R. K.2 (AUTHOR) 21.ravindra@gmail.com
Publikováno v:
Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ). Oct2021, Vol. 46 Issue 10, p9809-9830. 22p.
Autor:
Gadige, Aswini Kumar, Paramesha
Publikováno v:
International Journal of Electrical & Computer Engineering (2088-8708); 2024, Vol. 14 Issue 5, p4977-4986, 10p
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-12 (2024)
Abstract The growth of two-dimensional hexagonal aluminum nitride (h-AlN) on transition metal dichalcogenide (TMD) monolayers exhibits superior uniformity and smoothness compared to HfO $$_{2}$$ 2 on silicon substrate. This makes an h-AlN monolayer a
Externí odkaz:
https://doaj.org/article/7898f35a71634ccf8091a0a1226de0ef
Publikováno v:
Nano-Micro Letters, Vol 17, Iss 1, Pp 1-62 (2024)
Highlights The review provides a brief overview of the basic structure, operating mechanism, and key performance indicators of flexible graphene field-effect transistors. The review details the preparation strategy of flexible graphene field-effect t
Externí odkaz:
https://doaj.org/article/4875d7b77d4b49d297e8b51afa57d731