Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Autor: Haiyan Ou, Peter Uhd Jepsen, Pernille Klarskov, Korbinian J. Kaltenecker, Krzysztof Iwaszczuk, Kion Norrman, Abebe Tilahun Tarekegne, Weifang Lu

Publikováno v: Tarekegne, A T, Kaltenecker, K J, Klarskov, P, Iwaszczuk, K, Lu, W, Ou, H, Norrman, K & Jepsen, P U 2020, ' Subcycle Nonlinear Response of Doped 4 H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy ', ACS Photonics, vol. 7, no. 1, pp. 221-231 . https://doi.org/10.1021/acsphotonics.9b01462
Tarekegne, A T, Kaltenecker, K J, Klarskov, P, Iwaszczuk, K, Lu, W, Ou, H, Norrman, K & Jepsen, P U 2019, ' Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy ', ACS Photonics, vol. 7, no. 1, pp. 221-231 . https://doi.org/10.1021/acsphotonics.9b01462

We investigate single-cycle terahertz (THz) field-induced nonlinear absorption in doped silicon carbide. We find that the nonlinear response is ultrafast, and we observe up to 20% reduction of transmission of single THz pulses at peak field strengths

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https://doi.org/10.1021/acsphotonics.9b01462