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pro vyhledávání: '"field accelerated diffusion"'
By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V d =1 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea3fb34114dda924eff9c36c88ae3d00
https://publica.fraunhofer.de/handle/publica/196922
https://publica.fraunhofer.de/handle/publica/196922
