Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors

Autor: Raymundo Marcial-Hernandez, Krishna C. Persaud, Nicholas Bull, Raja U. Khan, Michael L. Turner, Sankara Rao Gollu, Suresh Kumar Garlapati, Daniel J. Tate, Aiman Rahmanudin, Adibah Zamhuri, Sheida Faraji

Publikováno v: Rahmanudin, A, Tate, D J, Marcial-Hernandez, R, Bull, N, Garlapati, S K, Zamhuri, A, Khan, R U, Faraji, S, Gollu, S R, Persaud, K C & Turner, M L 2020, ' Robust High-Capacitance Polymer Gate Dielectrics for Stable Low-Voltage Organic Field-Effect Transistor Sensors ', Advanced Electronic Materials, vol. 6, no. 3, 1901127, pp. 1901127 . https://doi.org/10.1002/aelm.201901127

Organic field‐effect transistors (OFETs) have shown great promise for use as chemical sensors for applications that range from the monitoring of food spoilage to the determination of air quality and the diagnosis of disease. However, for these devi

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https://doi.org/10.1002/aelm.201901127