Zobrazeno 1 - 10
of 239
pro vyhledávání: '"ferroelectric field-effect transistor (FeFET)"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 779-784 (2024)
We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity
Externí odkaz:
https://doaj.org/article/c8f5d1672cf2455eb0650383fada5d21
Autor:
Bohyeon Kang, Jehyun An, Jongseo Park, Giryun Hong, Beomjoo Ham, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek
Publikováno v:
IEEE Access, Vol 12, Pp 110273-110282 (2024)
Ferroelectric devices and monolithic three-dimensional integration technology (M3D) with good CMOS process compatibility have emerged as promising solutions to scaling issue at the device and system levels, respectively. In this study, we developed a
Externí odkaz:
https://doaj.org/article/d76d5c6782504f59997ddb2a6a87855c
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 31-39 (2024)
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs. R
Externí odkaz:
https://doaj.org/article/5ea8eca713e4442597a3ac1a5272f083
Autor:
Heng Li Lin, Pin Su
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 17-22 (2024)
Using extensive Monte-Carlo simulations with a nucleation-limited-switching (NLS) ferroelectric model and considering cycle-to-cycle variations, this paper constructs and analyzes the intrinsic conductance (GDS) response of stacked-nanosheet FeFET sy
Externí odkaz:
https://doaj.org/article/cfba77672a8246b4bb1aa257e1343331
Autor:
Saion K. Roy, Naresh R. Shanbhag
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 22-30 (2024)
Resistive in-memory computing (IMC) architectures currently lag behind SRAM IMCs and digital accelerators in both energy efficiency and compute density due to their low compute accuracy. This article proposes the use of signal-to-noise-plus-distortio
Externí odkaz:
https://doaj.org/article/28107b97e2f8428e821dcc1d60abbe85
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 143-150 (2023)
This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET). The analysis is conducted through accurate multiphysics technology CAD (TCAD) simulations and rad
Externí odkaz:
https://doaj.org/article/fb78c2801ef34841a43794162252be7c
Autor:
Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM‐based synaptic cores suffer from the trade‐off between bit density a
Externí odkaz:
https://doaj.org/article/7056e755c1db4aa49054c6baa0945bda
Autor:
Likhitha Mankali, Nikhil Rangarajan, Swetaki Chatterjee, Shubham Kumar, Yogesh Singh Chauhan, Ozgur Sinanoglu, Hussam Amrouch
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 102-110 (2022)
With the emergence of the Internet of Things (IoT), deep neural networks (DNNs) are widely used in different domains, such as computer vision, healthcare, social media, and defense. The hardware-level architecture of a DNN can be built using an in-me
Externí odkaz:
https://doaj.org/article/1842bd46e8eb4700871513b8811933ef
Autor:
You-Sheng Liu, Pin Su
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 346-350 (2022)
This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations. Our study indicate
Externí odkaz:
https://doaj.org/article/48612216b3584a358b238cdcd21794ad
Autor:
Cedric Marchand, Ian O'Connor, Mayeul Cantan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 1, Pp 19-26 (2022)
Emerging nonvolatile memory technologies are attracting interest from the system design level to implement alternatives to conventional von-Neumann computing architectures. In particular, the hafnium oxide-based ferroelectric (FE) memory technology i
Externí odkaz:
https://doaj.org/article/532a57c5c39f4a34bd00c6e5b5cbaef4