Zobrazeno 1 - 10
of 5 234
pro vyhledávání: '"ferroelectric RAM"'
Publikováno v:
In Materials Science in Semiconductor Processing January 2021 121
Publikováno v:
IEEE Transactions on Plasma Science. 49:756-769
In order to simulate the damage effect of space high-energy particle interacting on ferroelectric random access memory (RAM), the theoretical model of laser supported detonation wave is derived. Also, the equivalent target model of the collision betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80520bce4df03be18fbc3adf29f09185
https://doi.org/10.1109/tps.2021.3050884
https://doi.org/10.1109/tps.2021.3050884
Akademický článek
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Conference
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Kniha
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Publikováno v:
Materials Science in Semiconductor Processing. 121:105358
In order to reveal the temperature evolutionary characteristics of typical ferroelectric RAM (Random Access Memory) irradiated by femtosecond pulsed laser, a physical model of a typical ferroelectric RAM is established. The idea of using a continuous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ff499e54dc1ea3a94ab15d974bc33cb
https://doi.org/10.1016/j.mssp.2020.105358
https://doi.org/10.1016/j.mssp.2020.105358
Publikováno v:
2016 5th International Symposium on Next-Generation Electronics (ISNE).
The paper proposed optics non-invasive peripheral capillary oxygen saturation (SPO2) data which used ferroelectric RAM to calculate and record large SPO2 data. Traditional SPO2 device used external EEPROM to record large data, and a microcontroller c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92d3a542b3961bfa99e464d0f110883c
https://doi.org/10.1109/isne.2016.7543374
https://doi.org/10.1109/isne.2016.7543374
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 54:1726-1730
In this study, the Ba(Zr0.1Ti0.9)O3 (BZ1T9) thin films have been well deposited on the Pt/Ti/SiO2/Si substrate. The optimum radio frequency (RF) deposition parameters are developed, and the BZ1T9 thin films deposition at the optimum parameters have t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9cf8c62461c1f2c01feceeb6e7b7291
https://doi.org/10.1109/tuffc.2007.457
https://doi.org/10.1109/tuffc.2007.457
Autor:
Takashi Yamamoto, D. Yamazaki, Kenji Mukaida, Hiroyuki Nakamoto, Shoichi Masui, T. Ninomiya, Kunihiko Gotoh, H. Kurata, T. Ohkawa, S. Yamada
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:101-110
A passive UHF RF identification (RFID) tag IC with embedded 2-KB ferroelectric RAM (FeRAM) for rewritable applications enables a 2.9 times faster read-and-write transaction time over EEPROM-based tag ICs. The resulting FeRAM-based tag has a nominally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d504064efad375130788d73abc3d9a4
https://doi.org/10.1109/jssc.2006.886523
https://doi.org/10.1109/jssc.2006.886523
Autor:
Jie Liu, Zhen-Lei Yang, Xiaohui Wang, Yunfei En, Bin Li, Bin Wang, Lei Zhifeng, Zhang Zhangang, Chen Hui
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Single event effects (SEE) in two commercial-off-the-shelf (COTS) Ferroelectric Random Access Memory (FeRAM) technologies were investigated by heavy ions and pulsed laser irradiation. At least six SEE types were observed. The majority of the errors w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453053f94bbbcaf86d30300f45339405
https://doi.org/10.1109/redw.2015.7336734
https://doi.org/10.1109/redw.2015.7336734