Designing antiphase boundaries by atomic control of heterointerfaces

Autor: Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, Plummer, E. W.

Publikováno v: Proceedings of the National Academy of Sciences of the United States of America, 2018 Sep . 115(38), 9485-9490.

Externí odkaz: https://www.jstor.org/stable/26531140

Extended defects in heteroepitaxial structures on silicon by Molecular Dynamics simulations: applications to SiGe and cubic SiC

Autor: BARBISAN, LUCA

Il numero di transistor per unità di area che possono essere posizionati su un wafer a semiconduttore dipende dalla capacità del wafer di dissipare tale energia termica. I materiali con elevata conducibilità termica e temperatura di fusione, come

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::943b6b95c7729e3385e93369f4742ed4
http://hdl.handle.net/10281/366130

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Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

Autor: Luca Barbisan, Emilio Scalise, Anna Marzegalli

Publikováno v: physica status solidi (b). 259:2100584

The crossing of stacking faults (SFs) (namely dislocation forests) in 3C-SiC is experimentally probed to cause detrimental effects on the electronic properties of the layer. By means of classical molecular dynamics simulations, for the first time the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b59bd7acd26984c24f1b05cef6062cc
https://doi.org/10.1002/pssb.202100584

Reduction of dislocation densities in single crystal CVD diamond by using self-assembled metallic masks

Autor: Mehdi Naamoun, Alix Gicquel, Pascal Doppelt, Alexandre Tallaire, Jocelyn Achard, Julien Barjon, Marc Legros

Publikováno v: Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2015, 58, pp.62-68. ⟨10.1016/j.diamond.2015.06.012⟩
Diamond and Related Materials, 2015, 58, pp.62-68. ⟨10.1016/j.diamond.2015.06.012⟩

cited By 3; International audience; The development of diamond-based electronic devices designed to operate at high power is strongly hampered by the lack of low dislocation single crystal material. Dislocations in Chemically Vapor Deposited (CVD) di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c45d67d38e2fb6c6c6a522542794dcf8
https://doi.org/10.1016/j.diamond.2015.06.012