Zobrazeno 1 - 10
of 1 029
pro vyhledávání: '"event effect"'
Publikováno v:
Yuanzineng kexue jishu, Vol 58, Iss 2, Pp 506-512 (2024)
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD). For most devices TID a
Externí odkaz:
https://doaj.org/article/d2a1f1a60d674da9a8a4b30116889eb9
Publikováno v:
Yuanzineng kexue jishu, Vol 58, Iss 1, Pp 248-256 (2024)
As the core of high-voltage direct-current transmission technology, the DC converter valve and its key power device thyristor face a high risk of failure caused by atmospheric neutron when operating in high-altitude areas. The atmospheric neutron fai
Externí odkaz:
https://doaj.org/article/791ebd047e314ae68132ae3bac0b85a3
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1353 (2024)
For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiatio
Externí odkaz:
https://doaj.org/article/af0a7a99248b4414ac1944a782fcf18c
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2241-2253 (2023)
Deep space exploration, nuclear industry and high energy physics raise higher requirements for the radiation hardness of integrated circuits. However, the existing radiation hardening technologies, such as radiation hardness by design based on bulk s
Externí odkaz:
https://doaj.org/article/da26683f8e5c4cdbbc91faab6998dfdf
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2254-2263 (2023)
The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The li
Externí odkaz:
https://doaj.org/article/8e7811f4cb05412791f6bd623e0ddd5e
Autor:
CHEN Qiming;BAO Jie;MA Xu;GUO Gang*;ZHAO Shuyong;ZHANG Zheng;HAN Jinhua;ZHANG Fuqiang;LI Wangtian
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2281-2287 (2023)
Neutron-induced single event effects have potential influence on the reliability of electronic devices in aircraft and ground-based nuclear facilities. The white neutron source, generated by heavy metal target bombardment from proton accelerators, is
Externí odkaz:
https://doaj.org/article/a0d6313f235b4371bfb93ac4ffc98033
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2295-2303 (2023)
The advantages of SiC MOSFETs (metal-oxide semiconductor field effect transistor) make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to sing
Externí odkaz:
https://doaj.org/article/a49467d116744e0e828abb10f8ad64a4
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2304-2313 (2023)
The rapid growth of China’s aerospace sector, along with the creation of expansive space configurations like space stations, and the integration of high-performance electric propulsion systems require power semiconductor devices of increasingly bet
Externí odkaz:
https://doaj.org/article/4908b2c764364711a27230599845d4a8
Autor:
ZHAO Shuyong1,2;GUO Gang1,2,*;SUI Li1,2;ZHANG Zheng1,2;CHEN Qiming1,2;LIU Jiancheng1,2;ZHANG Shufeng
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 10, Pp 2026-2033 (2023)
There are a lot of particles in space, including protons and heavy ions mainly. These particles in space can induce different radiation effects on the electronic devices, such as single event effect and displacement damage. The single event effect is
Externí odkaz:
https://doaj.org/article/9eca42970630481aae9d881022d0de34
Autor:
Jaime Cardenas Chavez, Dave Hiemstra, Adriana Noguera Cundar, Brayden Johnson, David Baik, Li Chen
Publikováno v:
Energies, Vol 17, Iss 18, p 4725 (2024)
This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose 60Co irradiation. Single-Event Effect (SEE) sensitivity was
Externí odkaz:
https://doaj.org/article/6afba0920cd1437bb45dfada04bd0302