Memory Window in Si:HfO 2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes

Autor: Laguerre, J., Bocquet, Marc, Billoint, O., Martin, S., Coignus, J., Carabasse, C., Magis, T., Dewolf, T., Andrieu, F., Grenouillet, L.

Publikováno v: IMW 2023-2023 IEEE International Memory Workshop
IMW 2023-2023 IEEE International Memory Workshop, IEEE, May 2023, Monterey (CA), United States. pp.1-4, ⟨10.1109/IMW56887.2023.10145972⟩

International audience; The Memory Window (MW) of BEOL-integrated Si:HfO 2-based 16kbit 1T1C FeRAM arrays is shown to be significantly improved (×3) by etching the ferroelectric (FE) film of the Ferroelectric CAPacitor (FeCAP). To estimate the MW ev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4deb07b3b5c62743794bbac0d0551285
https://hal.science/hal-04130967