Zobrazeno 1 - 10
of 159
pro vyhledávání: '"elektronischer Transport"'
Autor:
Carrillo-Aravena, Eduardo, Finzel, Kati, Ray, Rajyavardhan, Richter, Manuel, Heider, Tristan, Cojocariu, Iulia, Baranowski, Daniel, Feyer, Vitaliy, Plucinski, Lukasz, Gruschwitz, Markus, Tegenkamp, Christoph, Ruck, Michael
Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation-free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi14Rh3I9, the first weak 3D TI, topology
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A91959
https://tud.qucosa.de/api/qucosa%3A91959/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A91959/attachment/ATT-0/
Autor:
Fuchs, Christopher
Accessing Topological Phases of Mercury Cadmium Telluride Heterostructure Devices presents a broad study on quantum transport effects in the major topological transport phases of devices fabricated from mercury cadmium telluride quantum wells. The in
We theoretically investigate the influence of defect-induced long-range deformations in carbon nanotubes on their electronic transport properties. To this end we perform numerical ab-initio calculations using a density-functional-based tight-binding
The control of low dimensional materials holds potential for revolutionizing the electronic, thermal, and thermoelectric materials engineering. Through strategic manipulation and optimization of these materials, unique properties can be uncover which
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A87656
https://tud.qucosa.de/api/qucosa%3A87656/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A87656/attachment/ATT-0/
Autor:
Sonner, Maximilian M.
In den letzten Jahrzehnten haben III-V Halbleiter Nanodrähte großes Interesse in vielen Bereichen der Forschung und Industrie geweckt, da sie sehr vielversprechende Materialsysteme für zukünftige hochleistungsfähige, nanoelektronische und nanoph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3341::516601b2846548c458d3ef64bf545a2c
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/95271
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/95271
Autor:
Mahler, David
The motivation for this work has been contributing a step to the advancement of technology. A next leap in technology would be the realization of a scalable quantum computer. One potential route is via topological quantum computing. A profound unders
Autor:
Mahler, David
The motivation for this work has been contributing a step to the advancement of technology. A next leap in technology would be the realization of a scalable quantum computer. One potential route is via topological quantum computing. A profound unders
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a66e5d5b3848fc4f979181136f0a032c
Autor:
Mundinar, Simon
The field of spintronics, where the electron spin is used next to the electron charge as an additional degree of freedom for information transfer, shows huge promise for future developments in the area of information processing and storage. Of partic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4705a8cc1d542e4d7f9322f020a67468
https://duepublico2.uni-due.de/receive/duepublico_mods_00073437
https://duepublico2.uni-due.de/receive/duepublico_mods_00073437
Autor:
Breunig, Daniel Manfred
Over the last two decades, accompanied by their prediction and ensuing realization, topological non-trivial materials like topological insulators, Dirac semimetals, and Weyl semimetals have been in the focus of mesoscopic condensed matter research. W
Publikováno v:
Journal of Physics Communications 2(2018), 115023
We theoretically investigate the influence of defect-induced long-range deformations in carbon nanotubes on their electronic transport properties. To this end we perform numerical ab-initio calculations using a density-functional-based tight-binding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0989ef97ec4ad3f155e756d062584d49
http://arxiv.org/abs/1705.01753
http://arxiv.org/abs/1705.01753