Zobrazeno 1 - 10
of 142 348
pro vyhledávání: '"electronic band"'
Autor:
Zhang, Dongzhou1 (AUTHOR) dzzhang@cars.uchicago.edu, Mandal, Sagarmoy2 (AUTHOR), Chung, Duck Young3 (AUTHOR), Xu, Jingui4 (AUTHOR), Shan, Nannan5 (AUTHOR), Kanatzidis, Mercouri G.3,6 (AUTHOR), Chen, Ming2 (AUTHOR) chen4116@purdue.edu
Publikováno v:
Communications Chemistry. 8/8/2024, Vol. 7 Issue 1, p1-7. 7p.
Autor:
Li, Mingtao, Wang, Yiming, Pei, Cuiying, Zhang, Mingxin, Li, Nana, Guan, Jiayi, Amboage, Monica, Adama, N-Diaye, Kong, Qingyu, Qi, Yanpeng, Yang, Wenge
We report a comprehensive study of electronic band structure for single-layer (SL) and bilayer (BL) RP-nickelates probed by in-situ HP X-ray absorption near edge spectroscopy (XANES). At ambient pressure (AP), the energy splitting delta_E of d_3z^2-r
Externí odkaz:
http://arxiv.org/abs/2410.04230
In comparison to simpler data such as chemical formulas and lattice structures, electronic band structure data provide a more fundamental and intuitive insight into superconducting phenomena. In this work, we generate superconductor's lattice structu
Externí odkaz:
http://arxiv.org/abs/2409.09419
Density functional theory is used to study the effect of compressive and tensile biaxial strain on Mn$_{3}$GaN. Mn$_{3}$GaN is a non-collinear antiferromagnetic antiperovskite with a similar structure to that of an ideal cubic oxide perovskite, but w
Externí odkaz:
http://arxiv.org/abs/2410.04163
We present a machine learning (ML) method for efficient computation of vibrational thermal expectation values of physical properties from first principles. Our approach is based on the non-perturbative frozen phonon formulation in which stochastic Mo
Externí odkaz:
http://arxiv.org/abs/2409.01523
Autor:
Uchôa, E. S., Lima, W. P., Sena, S. H. R., Chaves, A. J. C., Pereira Jr., J. M., da Costa, D. R.
We investigate the electronic properties of nanoribbons made out of monolayer Lieb, transition, and kagome lattices using the tight-binding model with a generic Hamiltonian. It allows us to map the evolutionary stages of the interconvertibility proce
Externí odkaz:
http://arxiv.org/abs/2408.15764
Polytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure
Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and creating quant
Externí odkaz:
http://arxiv.org/abs/2407.14918
Autor:
Fèvre, Patrick Le, Salazar, Raphaël, Jamet, Matthieu, Bertran, François, Bigi, Chiara, Ourghi, Abdelkarim, Vergnaud, Céline, Pulkkinen, Aki, Minar, Jan, Jaouen, Thomas, Rault, Julien
Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction)
Externí odkaz:
http://arxiv.org/abs/2407.03768
Autor:
Pentz, Henry Kelbrick, Warford, Thomas, Timokhin, Ivan, Yang, Qian, Bhattacharya, Anupam, Mishchenko, Artem
Two-dimensional materials with flat electronic bands are promising for realizing exotic quantum phenomena such as unconventional superconductivity and nontrivial topology, but exploring their vast chemical space remains challenging. Here, we introduc
Externí odkaz:
http://arxiv.org/abs/2406.11967
Autor:
Jiang, Jin, Gao, Qixuan, Zhou, Zekang, Shen, Cheng, Di Luca, Mario, Hajigeorgiou, Emily, Watanabe, Kenji, Taniguchi, Takashi, Banerjee, Mitali
Moir\'e systems featuring flat electronic bands exhibit a vast landscape of emergent exotic quantum states, making them one of the resourceful platforms in condensed matter physics in recent times. Tuning these systems via twist angle and the electri
Externí odkaz:
http://arxiv.org/abs/2405.12885