Zobrazeno 1 - 10
of 230 431
pro vyhledávání: '"electron-mobility"'
Autor:
Poobalan, Banu1,2 banu@unimap.edu.my, Hashim, Nuralia Syahida1, Natarajan, Manikandan3, Abd Rahim, Alhan Farhanah4
Publikováno v:
Journal of Engineering & Technological Sciences. 2024, Vol. 56 Issue 3, p367-376. 10p.
Autor:
Kaneko, Mitsuaki1 (AUTHOR) kaneko@semicon.kuee.kyoto-u.ac.jp, Matsuoka, Taiga1 (AUTHOR), Kimoto, Tsunenobu1 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 5/28/2024, Vol. 135 Issue 20, p1-7. 7p.
Autor:
Feldman, Mayer M., Fuchs, Gordian, Liu, Tiffany, D'Imperio, Luke A., Henry, M. David, Shaner, Eric A., Lyon, Stephen A.
We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit with a Char
Externí odkaz:
http://arxiv.org/abs/2412.02018
Autor:
Hvid-Olsen, Thor, Christoffersen, Christina H., Carrad, Damon J., Gauquelin, Nicolas, Olsteins, Dags, Verbeeck, Johan, Bergeal, Nicolas, Jespersen, Thomas S., Trier, Felix
The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This adds to the a
Externí odkaz:
http://arxiv.org/abs/2411.03824
Autor:
Singh, Gyanendra1 (AUTHOR) gsingh@icmab.es, Guzman, Roger2 (AUTHOR), Saïz, Guilhem3 (AUTHOR), Zhou, Wu2 (AUTHOR), Gazquez, Jaume1 (AUTHOR), Masoudinia, Fereshteh1 (AUTHOR), Winkler, Dag4 (AUTHOR), Claeson, Tord4 (AUTHOR), Fraxedas, Jordi5 (AUTHOR), Bergeal, Nicolas3 (AUTHOR), Herranz, Gervasi1 (AUTHOR), Kalaboukhov, Alexei4 (AUTHOR)
Publikováno v:
Communications Physics. 5/9/2024, Vol. 7 Issue 1, p1-9. 9p.
Autor:
Kui Feng1,2, Junwei Wang1, Sang Young Jeong3, Wanli Yang1, Jianfeng Li1, Han Young Woo3, Xugang Guo1 guoxg@sustech.edu.cn
Publikováno v:
Advanced Science. 10/17/2023, Vol. 10 Issue 29, p1-10. 10p.
Autor:
Hoffmann, Georg, Zupancic, Martina, Riaz, Aysha A., Kalha, Curran, Schlueter, Christoph, Gloskovskii, Andrei, Regoutz, Anna, Albrecht, Martin, Nordlander, Johanna, Bierwagen, Oliver
Publikováno v:
Adv. Mater. 2024, 2409076
In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimens
Externí odkaz:
http://arxiv.org/abs/2408.07659
Autor:
Ghosh, Saptarsi, Frentrup, Martin, Hinz, Alexander M., Pomeroy, James W., Field, Daniel, Wallis, David J., Kuball, Martin, Oliver, Rachel A.
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si
Externí odkaz:
http://arxiv.org/abs/2407.09723
Autor:
Peterson, Carl, Bhattacharyya, Arkka, Chanchaiworawit, Kittamet, Kahler, Rachel, Roy, Saurav, Liu, Yizheng, Rebollo, Steve, Kallistova, Anna, Mates, Thomas E., Krishnamoorthy, Sriram
Publikováno v:
Appl. Phys. Lett. 125, 182103 (2024)
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $\mu$m thick $\beta$-Ga$_2$O$_3$ films with electron concentrations in the 10$^{15}$ cm$^{-3}$ range and record-high room temperature Hall electron mobili
Externí odkaz:
http://arxiv.org/abs/2407.17089