Zobrazeno 1 - 5
of 5
pro vyhledávání: '"electron beam litography"'
Autor:
Marco Felici, Mario Capizzi, Anna Vinattieri, Annamaria Gerardino, Antonio Polimeni, Mark Hopkinson, Luca Businaro, Massimo Gurioli, Francesco Biccari, Francesca Intonti, Silvia Rubini, Giorgio Pettinari
Publikováno v:
Microelectronic engineering 174 (2017): 16–19. doi:10.1016/j.mee.2016.12.003
info:cnr-pdr/source/autori:Pettinari G.; Gerardino A.; Businaro L.; Polimeni A.; Capizzi M.; Hopkinson M.; Rubini S.; Biccari F.; Intonti F.; Vinattieri A.; Gurioli M.; Felici M./titolo:A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides/doi:10.1016%2Fj.mee.2016.12.003/rivista:Microelectronic engineering/anno:2017/pagina_da:16/pagina_a:19/intervallo_pagine:16–19/volume:174
info:cnr-pdr/source/autori:Pettinari G.; Gerardino A.; Businaro L.; Polimeni A.; Capizzi M.; Hopkinson M.; Rubini S.; Biccari F.; Intonti F.; Vinattieri A.; Gurioli M.; Felici M./titolo:A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides/doi:10.1016%2Fj.mee.2016.12.003/rivista:Microelectronic engineering/anno:2017/pagina_da:16/pagina_a:19/intervallo_pagine:16–19/volume:174
We report on a novel lithographic approach for the fabrication of integrated quantum dot (QD)-photonic crystal (PhC) nanocavity systems. We exploit unique hydrogen's ability to tailor the band gap energy of dilute nitride semiconductors to fabricate
Autor:
Peter Kepič
Publikováno v:
Peter Kepič
The crystal structure of phase-change materials can be reconfigured by external stimuli, which often result in a change of materials electrical or magnetic properties. Although this effect has been already used to modulate plasmonic resonances in nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::340c02cb7e02450c8dd641ea07907717
Autor:
Metelka, Ondřej
The task of master’s thesis was to perform optimalization process for preparing metal etching mask by electron beam litography and subsequent selective wet ething of silicon with crystalographic orientation (100). Further characterization of etched
Externí odkaz:
http://www.nusl.cz/ntk/nusl-231496
Autor:
A. S. Sachrajda, Richard J. K. Taylor, Y. Feng, Peter Coleridge, Michael Davies, P. A. Marshall
The deposition of metallic patterns on the surface of a semiconductor is a critical part of today’s very large scale integrated technology, where the patterns are employed in three distinct capacities: as ohmic contacts, as electrostatic gates, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1bb95c42019f429b3f4aec690032b6f
https://doi.org/10.1116/1.588308
https://doi.org/10.1116/1.588308
The pattern placement accuracy (PPA) is an important parameter in e-beam "direct write" for nanoelectronic applications. With a LEICA EBPG 4 HR, the influence of different mark/substrate combinations and of several writing parameters on the PPA was i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce8b08fe6e1c1028816d8b9466ff53ff
https://publica.fraunhofer.de/handle/publica/184374
https://publica.fraunhofer.de/handle/publica/184374