Zobrazeno 1 - 10
of 1 812
pro vyhledávání: '"dual-gate"'
Publikováno v:
Heliyon, Vol 10, Iss 13, Pp e34134- (2024)
Here, we investigate the effects of interface defects on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs) utilizing bottom, top, and dual gatings. The field-effect mobility (27.3 cm2/V
Externí odkaz:
https://doaj.org/article/02f0e8f4722246508aa6fa66219d68db
Autor:
Sunaina Priyadarshi, Abidur Rahaman, Mohammad Masum Billah, Sabiqun Nahar, Md. Redowan Mahmud Arnob, Jin Jang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 587-593 (2024)
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-I
Externí odkaz:
https://doaj.org/article/fb2941ba9e5f49d489a9986e06338bee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 359-364 (2024)
Capacitorless DRAM architectures based on Back-End-of-Line (BEOL)-transistors are promising for long-retention, high-density and low-power 3D DRAM solutions due to its low leakage, operational flexibility, and monolithic integration capability. Diffe
Externí odkaz:
https://doaj.org/article/27628b7175064d0a8c61579e8b5c3885
Akademický článek
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Publikováno v:
Results in Physics, Vol 59, Iss , Pp 107612- (2024)
The linearity performance of the AlGaN/GaN high-electron-mobility-transistors (HEMTs) is critical for circuit applications especially at millimeter-wave frequencies. In this paper, we propose a new dual-gate (DG) configuration for linearity improveme
Externí odkaz:
https://doaj.org/article/ca5c3c45f4b24a8a89df50c9f4410b6e
Autor:
Kyu-Ho Lee, Dongseok Kwon, In-Seok Lee, Joon Hwang, Jiseong Im, Jong-Ho Bae, Woo Young Choi, Sung Yun Woo, Jong-Ho Lee
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 1, Pp n/a-n/a (2024)
Herein, dual‐gate field‐effect transistors (DG FETs) fabricated on Si substrate and a corresponding NOR‐type array designed for low‐power on‐chip trainable hardware neural networks (HNNs) are presented. The fabricated DG FET exhibits notabl
Externí odkaz:
https://doaj.org/article/ad450379e244497fabd63822824ed7b8
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Integration of organic thin‐film transistor (OTFT) devices with a wireless data transmission system such as 2.4‐GHz Bluetooth low energy (BLE) is a significant requirement for activating the Internet of Thing (IoT) ecosystem based on a v
Externí odkaz:
https://doaj.org/article/0c80223f25a7417ab1b9a17db4395e87
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Four conjugated polymers are integrated with a bacteriorhodopsin D94N‐HmBRI in organic field‐effect transistors (OFETs) with the device architecture of doped Si bottom gate/SiO2 bottom electric/semiconducting polymer/Au electrodes/D94N
Externí odkaz:
https://doaj.org/article/be43e32ba1fb49b092d72ca1d44c97fe
Publikováno v:
IEEE Access, Vol 11, Pp 98452-98457 (2023)
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher v
Externí odkaz:
https://doaj.org/article/fdc628e9623349a48518baeebcddc8bf
Autor:
Yuhao Zhu, Fan Li, Miao Cui, Zhicheng Fang, Ang Li, Dongyi Yang, Yinchao Zhao, Huiqing Wen, Wen Liu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 230-234 (2023)
In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobilit
Externí odkaz:
https://doaj.org/article/641e94405499456aa862ade629f8d5dc