Zobrazeno 1 - 10
of 1 810
pro vyhledávání: '"dual‐gate"'
Publikováno v:
Heliyon, Vol 10, Iss 13, Pp e34134- (2024)
Here, we investigate the effects of interface defects on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs) utilizing bottom, top, and dual gatings. The field-effect mobility (27.3 cm2/V
Externí odkaz:
https://doaj.org/article/02f0e8f4722246508aa6fa66219d68db
Autor:
Sunaina Priyadarshi, Abidur Rahaman, Mohammad Masum Billah, Sabiqun Nahar, Md. Redowan Mahmud Arnob, Jin Jang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 587-593 (2024)
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-I
Externí odkaz:
https://doaj.org/article/fb2941ba9e5f49d489a9986e06338bee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 359-364 (2024)
Capacitorless DRAM architectures based on Back-End-of-Line (BEOL)-transistors are promising for long-retention, high-density and low-power 3D DRAM solutions due to its low leakage, operational flexibility, and monolithic integration capability. Diffe
Externí odkaz:
https://doaj.org/article/27628b7175064d0a8c61579e8b5c3885
Publikováno v:
Results in Physics, Vol 59, Iss , Pp 107612- (2024)
The linearity performance of the AlGaN/GaN high-electron-mobility-transistors (HEMTs) is critical for circuit applications especially at millimeter-wave frequencies. In this paper, we propose a new dual-gate (DG) configuration for linearity improveme
Externí odkaz:
https://doaj.org/article/ca5c3c45f4b24a8a89df50c9f4410b6e
Akademický článek
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Autor:
Kyu-Ho Lee, Dongseok Kwon, In-Seok Lee, Joon Hwang, Jiseong Im, Jong-Ho Bae, Woo Young Choi, Sung Yun Woo, Jong-Ho Lee
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 1, Pp n/a-n/a (2024)
Herein, dual‐gate field‐effect transistors (DG FETs) fabricated on Si substrate and a corresponding NOR‐type array designed for low‐power on‐chip trainable hardware neural networks (HNNs) are presented. The fabricated DG FET exhibits notabl
Externí odkaz:
https://doaj.org/article/ad450379e244497fabd63822824ed7b8
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Integration of organic thin‐film transistor (OTFT) devices with a wireless data transmission system such as 2.4‐GHz Bluetooth low energy (BLE) is a significant requirement for activating the Internet of Thing (IoT) ecosystem based on a v
Externí odkaz:
https://doaj.org/article/0c80223f25a7417ab1b9a17db4395e87
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Four conjugated polymers are integrated with a bacteriorhodopsin D94N‐HmBRI in organic field‐effect transistors (OFETs) with the device architecture of doped Si bottom gate/SiO2 bottom electric/semiconducting polymer/Au electrodes/D94N
Externí odkaz:
https://doaj.org/article/be43e32ba1fb49b092d72ca1d44c97fe
Publikováno v:
Results in Physics, Vol 53, Iss , Pp 106924- (2023)
Mobility of charge carriers in organic thin-film transistors (OTFTs) is one of the most important parameters, which is affected by the disorders in the semiconducting films. In general, realization of higher carrier concentration facilitates improved
Externí odkaz:
https://doaj.org/article/da407dcad8894efcadfefaee2f2eb9d6
Publikováno v:
IEEE Access, Vol 11, Pp 98452-98457 (2023)
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher v
Externí odkaz:
https://doaj.org/article/fdc628e9623349a48518baeebcddc8bf