Zobrazeno 1 - 10
of 599
pro vyhledávání: '"driver circuits"'
Publikováno v:
IET Power Electronics, Vol 17, Iss 14, Pp 1728-1735 (2024)
Abstract To solve the problems of difficulty in speed measurement and low accuracy of speed measurement of induction motor (IM) during fast starting, the electromagnetic field coupling circuit (EFCC) and open‐loop control of IM considering rapid sp
Externí odkaz:
https://doaj.org/article/289815830b534edc8ede51661fb468c0
Publikováno v:
IET Power Electronics, Vol 17, Iss 14, Pp 1867-1881 (2024)
Abstract Series connection of Silicon Carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) is an interesting solution to design switches for voltages that are not yet commercially available or limited for single‐die devi
Externí odkaz:
https://doaj.org/article/87de61d6149d472a8b9e6191e3b6f1b6
Publikováno v:
IET Power Electronics, Vol 17, Iss 12, Pp 1540-1551 (2024)
Abstract Active gate driving (AGD) is a promising concept for achieving high‐performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to s
Externí odkaz:
https://doaj.org/article/73cfd9b7c6c84065884c360ead9ad5de
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 487-497 (2023)
In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the integration of a monolithic gate driver. This tutorial-style
Externí odkaz:
https://doaj.org/article/584522298ecd44e6a631f124299b467a
Akademický článek
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Publikováno v:
IEEE Access, Vol 10, Pp 119140-119149 (2022)
This paper describes a voltage-mode transmitter that supports both non-return-to-zero (NRZ) and four-level pulse amplitude modulation (PAM4) signal transmission. A 2-tap feed-forward equalizer (FFE) is implemented with PAM4 equalization logic consist
Externí odkaz:
https://doaj.org/article/f55e7a825129453db8a8ed19e816358e
Akademický článek
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Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 346-367 (2021)
The voltage rating of the commercial Gallium Nitride (GaN) power devices are limited to 600/650 V due to the lateral structure. Stacking the low-voltage rating devices is a straightforward approach to block higher dc link voltage. However, the unbala
Externí odkaz:
https://doaj.org/article/25b8291ebd6a4812971d2266aabd09bc
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 463-482 (2021)
The voltage rating of commercial Gallium Nitride (GaN) power semiconductors is limited to 600/650 V because of the lateral structure. Stacking low-voltage switches is an effective way to block higher dc-link voltage. However, unbalanced voltage shari
Externí odkaz:
https://doaj.org/article/012c3d8fd28847efa3834e393fc3a368
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 315-321 (2019)
This paper presents automatic fault detection circuit for integrated gate drivers. The proposed circuit consists of one capacitor and two TFTs per scan line. The circuit can detect three types of faults, such as line disconnection (LD), low voltage s
Externí odkaz:
https://doaj.org/article/8e2010106c1540f0b17771a7c13108c9