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Distinctive Features of Metal-Insulator Transitions, Multiscale Phase Separation, and Related Effects in Hole-Doped Cuprates

Autor: Dzhumanov, S., Khidirov, I., Kurbanov, U. T., Khudayberdiev, Z. S., Rashidov, J. Sh.

Publikováno v: Ukrainian Journal of Physics; Vol. 64 No. 4 (2019); 322
Український фізичний журнал; Том 64 № 4 (2019); 322

We study the distinctive features of the metal-insulator transitions, multiscale phase separation, and evolution of coexisting insulating and metallic/superconducting phases in hole-doped cuprates. We show how these interrelated phenomena and related

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=issn20710194::7b5cef202f657da38ff72af49d01cc6f
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019307

Spectral properties of transition metal pnictides and chalcogenides: angle-resolved photoemission spectroscopy and dynamical mean field theory

Autor: Silke Biermann, Pierre Richard, Hong Ding, Ambroise van Roekeghem

Electronic Coulomb correlations lead to characteristic signatures in the spectroscopy of transition metal pnictides and chalcogenides: quasi-particle renormalizations, lifetime effects or incoherent badly metallic behavior above relatively low cohere

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8a5e8f648c955ddab5fc4d39e64b362

Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling

Autor: J. Coignus, G. Reimbold, D. Munoz, P. Scheiblin, Raphaël Lachaume, X. Garros

Publikováno v: 2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
2012 13th International Conference on Ultimate Integration on Silicon (ULIS), IEEE, Mar 2012, Grenoble, France
2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. pp.97-100, 2012, ⟨10.1109/ULIS.2012.6193366⟩
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International audience; This paper proposes to address how a-Si:H(p) bulk defects impact the macroscopic electrical characteristics of state-of-the-art HeteroJunction (HJ) solar cells. Thanks to 2D TCAD modeling we can give variation ranges for dopin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b87a550fd518bf2c22e648935a347de
https://doi.org/10.1109/ulis.2012.6193366