Zobrazeno 1 - 10
of 3 048
pro vyhledávání: '"direct bonding"'
Publikováno v:
Journal of Materials Research and Technology, Vol 32, Iss , Pp 3490-3499 (2024)
Cu–Cu joints with various interfacial microstructures were fabricated, by applying different annealing conditions to the joints to trigger different amounts of recrystallization and grain growth at the bonding interfaces. Three distinct interfaces
Externí odkaz:
https://doaj.org/article/49506bd438a449688b742a09bb62a880
Publikováno v:
Journal of Materials Research and Technology, Vol 33, Iss , Pp 2530-2537 (2024)
Electrodeposited -oriented nanotwinned Cu (NT-Cu) films consist of micron-scale columnar grains and they are thermally stable up to 400 °C. By adding nanoscale equiaxed Cu grains at the bottom of the NT-Cu films, anisotropic large grain growth could
Externí odkaz:
https://doaj.org/article/d667619980ce45238568fcbc230a23ac
Autor:
Yun-Fong Lee, Yu-Chen Huang, Jui-Sheng Chang, Ting-Yi Cheng, Po-Yu Chen, Wei-Chieh Huang, Mei-Hsin Lo, Kuan-Lin Fu, Tse-Lin Lai, Po-Kai Chang, Zhong-Yen Yu, Cheng-Yi Liu
Publikováno v:
Royal Society Open Science, Vol 11, Iss 9 (2024)
Fine-grain copper (Cu) films (grain size: 100.36 nm) with a near-atomic-scale surface (0.39 nm) were electroplated. Without advanced post-surface treatment, Cu–Cu direct bonding can be achieved with present-day fine-grain Cu films at 130℃ in air
Externí odkaz:
https://doaj.org/article/d8a16e4e273341e99b79d76575454a59
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 7957-7963 (2023)
A large lattice mismatch between Ag and Cu commonly results in incoherently polycrystalline deposited features. It is very challenging to epitaxially deposit an Ag film on Cu. In this study, an epitaxial Ag film was electroless-deposited on nanotwinn
Externí odkaz:
https://doaj.org/article/09af45e55da540f4aa594bb19ad9e96e
Publikováno v:
Materials, Vol 17, Iss 14, p 3467 (2024)
Cu–Cu joints have been adopted for ultra-high-density packaging for high-end devices. However, the atomic diffusion rate is notably low at the preferred processing temperature, resulting in clear and distinct weak bonding interfaces, which, in turn
Externí odkaz:
https://doaj.org/article/48f4ce35bed84cf5b6c3b9bec0b84d52
Publikováno v:
Materials, Vol 17, Iss 13, p 3245 (2024)
Cu–Cu joints have been adopted for ultra-high density of packaging for high-end devices. However, the processing temperature must be kept relatively low, preferably below 300 °C. In this study, a novel surface modification technique, quenching tre
Externí odkaz:
https://doaj.org/article/1b40821239454891b4b81a29b1422e5c
Publikováno v:
Materials, Vol 17, Iss 10, p 2236 (2024)
The thermal expansion behavior of Cu plays a critical role in the bonding mechanism of Cu/SiO2 hybrid joints. In this study, artificial voids, which were observed to evolve using a focused ion beam, were introduced at the bonded interfaces to investi
Externí odkaz:
https://doaj.org/article/acc65ce5ba1349828754d2ac1d8757ca
Autor:
Tsan-Feng Lu, Yu-Ting Yen, Pei-Wen Wang, Yuan-Fu Cheng, Cheng-Hsiang Chen, YewChung Sermon Wu
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 861 (2024)
For decades, Moore’s Law has been approaching its limits, posing a huge challenge for further downsizing to nanometer dimensions. A promising avenue to replace Moore’s Law lies in three-dimensional integrated circuits, where Cu–Cu bonding plays
Externí odkaz:
https://doaj.org/article/6fefe87a6b434b3aa4f5930bc3acd702
Publikováno v:
Materials, Vol 17, Iss 9, p 2150 (2024)
In the hybrid bonding process, the final stage of chemical mechanical polishing plays a critical role. It is essential to ensure that the copper surface is recessed slightly from the oxide surface. However, this recess can lead to the occurrence of i
Externí odkaz:
https://doaj.org/article/6c43bc895c184013be25d2bfcac346e0
Publikováno v:
Nanomaterials, Vol 14, Iss 9, p 771 (2024)
For decades, Moore’s Law has neared its limits, posing significant challenges to further scaling it down. A promising avenue for extending Moore’s Law lies in three-dimensional integrated circuits (3D ICs), wherein multiple interconnected device
Externí odkaz:
https://doaj.org/article/12b57a9878c44f7ebdd6d9c7538c946e