Zobrazeno 1 - 10
of 140
pro vyhledávání: '"dielektrikum"'
Autor:
Hentschel, R., Wachowiak, A., Großer, A., Kotzea, S., Debald, A., Kalisch, H., Vescan, A., Jahn, A., Schmult, S., Mikolajick, T.
We report and discuss the performance of an enhancement mode n-channel pseudo-vertical GaN metal oxide semiconductor field effect transistor (MOSFET). The trench gate structure of the MOSFET is uniformly covered with an Al₂O₃ dielectric and TiN e
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81245
https://tud.qucosa.de/api/qucosa%3A81245/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A81245/attachment/ATT-0/
Autor:
Calvo, Jesús, Steinke, Philipp, Wislicenus, Marcus, Gerlich, Lukas, Seidel, Robert, Clauss, Ellen, Uhlig, Benjamin
Publikováno v:
AMC 2015 – Advanced Metallization Conference
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects. The damage leads to an increase in k-value, which raises the RC delay, leading to increased power consumption and cross talk noise. Therefore, divers
Organosilane Downstream Plasma On Ultra Low-k Dielectrics: Comparing Repair With Post Etch Treatment
Autor:
Calvo, Jesús, Steinke, Philipp, Wislicenus, Marcus, Gerlich, Lukas, Seidel, Robert, Clauss, Ellen, Uhlig, Benjamin
Publikováno v:
AMC 2015 – Advanced Metallization Conference
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects. The damage leads to an increase in k-value, which raises the RC delay, leading to increased power consumption and cross talk noise. Therefore, divers
Autor:
Ricoeur, Andreas, Schlosser, Alexander
Publikováno v:
PAMM. 22
Gefördert im Rahmen des Projekts DEAL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f088d5fc8a4431b729c06eed002348df
https://doi.org/10.1002/pamm.202200148
https://doi.org/10.1002/pamm.202200148
Autor:
Aslani, Roozbeh
The control mechanism of a nanosecond dielectric barrier discharge (NS-DBD) actuator for mitigating laminar separation on airfoils was investigated using scale-adaptive simulations. The primary objective of this study was to investigate the mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3361::c6c992230c3fd6c2fe4f8b0acdac0d47
Publikováno v:
AMC 2015 – Advanced Metallization Conference
Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures,
Publikováno v:
AMC 2015 – Advanced Metallization Conference
An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The
Publikováno v:
AMC 2015 – Advanced Metallization Conference
Integration of dielectrics with increased porosity is required to reduce the capacitance of interconnects. However, the conventional dual damascene integration approach is causing negative effects to these materials avoiding their immediate implement