Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors

Autor: Di Girolamo, F. V., Aruta, C., Barra, M., Angelo, P. D, Cassinese, A.

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2 substrates. Afte

Externí odkaz: http://arxiv.org/abs/0904.2289

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The ARGO-YBJ experiment in Tibet

Autor: THE ARGO YBJ COLLABORATION G. Aielli a, b, C. Bacci c, d, B. Bartoli e, f, P. Bernardini g, h, X. J. Bi i, C. Bleve g, P. Branchini d, A. Budano d, S. Bussino c, A. K. Calabrese Melcarne x, P. Camarri a, Z. Cao i, A. Cappa j, k, R. Cardarelli b, S. Catalanotti f, e, C. Cattaneo l, P. Celio c, S. Z. Chen i, Y. Chen i, N. Cheng i, P. Creti h, S. W. Cuim, B. Z. Dai o, G. D’Alí Staiti n, p, Danzengluobu q, M. Dattoli j, k, r, I. De Mitri g, B. D’Ettorre Piazzoli f, M. De Vincenzi c, T. Di Girolamo f, X. H. Ding q, G. Di Sciascio b, C. F. Feng s, Zhaoyang Feng i, Zhenyong Feng t, F. Galeazzi d, P. Galeotti j, r, R. Gargana d, Q. B. Gou i, Y. Q. Guo i, H. H. He i, Haibing Huq, Hongbo Hui, Q. Huang t, M. Iacovacci f, R. Iuppa a, I. James c, H. Y. Jia t, Labaciren q, H. J. Li q, J. Y. Li s, X. X. Li i, B. Liberti b, G. Liguori l, u, C. Liu i, C. Q. Liu o, M. Y. Lium, J. Liu o, H. Lui, X. H. Mai, G. Mancarella g, c, d, G. Marsella h, v, D. Martello g, S. Mastroianni e, X. R. Meng q, P. Montini c, C. C. Ning q, A. Pagliaro n, w, M. Panareo h, L. Perrone h, P. Pistilli c, X. B. Qu s, E. Rossi e, F. Ruggieri d, L. Saggese f, P. Salvini l, R. Santonico a, P. R. Shen i, X. D. Sheng i, F. Shi i, C. Stanescu d, A. Surdo h, Y. H. Tan i, P. Vallania j, S. Vernetto j, C. Vigorito j, B. Wangi, H. Wang i, C. Y. Wui, H. R. Wui, B. Xut, L. Xues, Y. X. Yanm, Q. Y. Yang o, X. C. Yang o, A. F. Yuan q, M. Zha i, H. M. Zhang i, JiLong Zhang i, JianLi Zhang i, L. Zhang o, P. Zhang o, X. Y. Zhang s, Y. Zhang i, Zhaxisangzhu q, X. X. Zhou t, F. R. Zhu i, Q. Q. Zhu i, G. Zizzi g, MARI, Stefano Maria

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 588:7-13

The setting up of the ARGO detector at the YangBaJing Cosmic Ray Laboratory (4300 m a.s.l., Tibet, P.R. China) has been completed during the last spring (2007). It consists of a central carpet made of 130 identical sub-units of 12 RPCs each (a "clust

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0a1b75d3b005625f3fbc80b4477da9a
https://doi.org/10.1016/j.nima.2008.01.019

AIR QUALITY BIOMONITORING

Autor: Di Michele, C., Di Girolamo, F., Collevecchio, G., Tavano, N., Bartolucci, F., Di Marzio, M., De Ritis, S. F., DINELLI, GIOVANNI, VITTORI ANTISARI, LIVIA, PIERI, LINDA

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4094::94fee09ae2bb0ab19adcd2a357708e35
http://hdl.handle.net/11585/521724

Bias stress instability in organic transistors investigated by ac admittance measurements.

Autor: Di Girolamo, F. V., Barra, M., Capello, V., Oronzio, M., Romano, C., Cassinese, A.

Publikováno v: Journal of Applied Physics; Jun2010, Vol. 107 Issue 11, p114508, 6p, 2 Charts, 6 Graphs