Zobrazeno 1 - 2
of 2
pro vyhledávání: '"der Werf, C. H. M. Van"'
Autor:
Schüttauf, J. W. A., der Werf, C. H. M. Van, van Sark, W. G. J. H. M., Rath, J. K., Schropp, R. E. I., Energy and Resources, Sub Physics of devices begr 1/1/17, Afd Nanophotonics, Energy System Analysis
Publikováno v:
Thin Solid Films, 519(14), 4476. Elsevier
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior to a-Si:H deposition. The atomic hydrogen is produced by hot-wire chemical vapor deposition (HWCVD). For this purpose, we deposited a-Si:H layers onto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ed55113af0959aefad663619797127c
https://doi.org/10.1016/j.tsf.2011.01.319
https://doi.org/10.1016/j.tsf.2011.01.319
Autor:
Schüttauf, J. W. A., der Werf, C. H. M. Van, van Sark, W. G. J. H. M., Rath, J. K., Schropp, R. E. I.
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior to a-Si:H deposition. The atomic hydrogen is produced by hot-wire chemical vapor deposition (HWCVD). For this purpose, we deposited a-Si:H layers onto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______101::63246c6870700d97572ef76fba326a6a
https://dspace.library.uu.nl/handle/1874/407284
https://dspace.library.uu.nl/handle/1874/407284
