Zobrazeno 1 - 10
of 35
pro vyhledávání: '"deep energy levels"'
Autor:
Arpad Kosa, Lubica Stuchlikova, Ladislav Harmatha, Jaroslav Kovac, Beata Sciana, Wojciech Dawidowski, Marek Tlaczala
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 1, Pp 114-119 (2017)
This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition depen
Externí odkaz:
https://doaj.org/article/1746e21a614e47c39cf9bf9180bcfa20
Publikováno v:
Eastern-European Journal of Enterprise Technologies, Vol 6, Iss 12 (96), Pp 35-42 (2018)
Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si , irradiated by diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e7dc972bfc8415df890a23ad22f9e93
https://doi.org/10.15587/1729-4061.2018.150959
https://doi.org/10.15587/1729-4061.2018.150959
Publikováno v:
Eastern-European Journal of Enterprise Technologies; Том 6, № 12 (96) (2018): Materials Science; 35-42
Восточно-Европейский журнал передовых технологий; Том 6, № 12 (96) (2018): Материаловедение; 35-42
Східно-Європейський журнал передових технологій; Том 6, № 12 (96) (2018): Матеріалознавство; 35-42
Восточно-Европейский журнал передовых технологий; Том 6, № 12 (96) (2018): Материаловедение; 35-42
Східно-Європейський журнал передових технологій; Том 6, № 12 (96) (2018): Матеріалознавство; 35-42
Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si , irradiated by diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::0a8f2aca7e8095c2875fc8ee04cb5958
http://journals.uran.ua/eejet/article/view/150959
http://journals.uran.ua/eejet/article/view/150959
Autor:
Jüri Krustok, Ian Forbes, M. V. Yakushev, O. M. Borodavchenko, V. D. Zhivulko, Robert W. Martin, J. Márquez-Prieto, M. A. Sulimov, M. V. Kuznetsov, A. V. Mudryi, Ekaterina Skidchenko, Paul R. Edwards
Publikováno v:
J. Vac. Sci. Technol. B. Nanotechnol. microelectron.
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Cu2ZnSnSe4 (CZTSe) is a semiconductor used as the absorber layer in highly promising sustainable thin film solar cells. The authors study the effect of Ar+ etching of copper deficient and zinc excess CZTSe thin films deposited on Mo/glass substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ee1aa30be4b85488cd23ade90c0c61d
Autor:
Ladislav Harmatha, B. Sciana, Wojciech Dawidowski, Lubica Stuchlikova, Jaroslav Kováč, A. Kosa, Marek Tłaczała
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 1, Pp 114-119 (2017)
This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b597dbfa76d38e2cd6d3a7da68a89add
https://doi.org/10.15598/aeee.v15i1.2023
https://doi.org/10.15598/aeee.v15i1.2023
Akademický článek
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Akademický článek
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Autor:
Dědič, Václav
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detectors. The accumulation of a space charge at deep energy levels due to a band bending at contacts with Schottky barriers and due to trapped photogenera
Externí odkaz:
http://www.nusl.cz/ntk/nusl-342278
Publikováno v:
MARTÍNEZ PASTOR, J. ; SEGURA, A. ; CHEVY, A. High-temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin-doped indium selenide. En: Journal of Applied Physics, 1993, vol. 74, no. 5
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b4119d741303ba35887a04acf3881bd
https://doi.org/10.1063/1.354597
https://doi.org/10.1063/1.354597