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Autor:
Yağlıkçı, A. Giray, Luo, Haocong, de Oliviera, Geraldo F., Olgun, Ataberk, Patel, Minesh, Park, Jisung, Hassan, Hasan, Kim, Jeremie S., Orosa, Lois, Mutlu, Onur
RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby rows. Recent D
Externí odkaz:
http://arxiv.org/abs/2206.09999
