Zobrazeno 1 - 10
of 88
pro vyhledávání: '"de Lima, Felipe P."'
We investigate the robustness of {\it virtual} topological states -- topological phases away from the Fermi energy -- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properti
Externí odkaz:
http://arxiv.org/abs/2412.08607
Half-Heusler compounds are known for their various compositions and multifunctional properties including topological phases. In this study, we investigate the topological classification of this class of materials based on the ordering of the $\Gamma_
Externí odkaz:
http://arxiv.org/abs/2409.01385
Autor:
Cunha, Rafael O., Garcia-Basabe, Yunier, Larrude, Dunieskys G., Gamino, Matheus, Lima, Erika N., de Lima, Felipe Crasto, Fazzio, Adalberto, Rezende, Sergio M., Azevedo, Antonio, Mendes, Joaquim B. S.
We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-dri
Externí odkaz:
http://arxiv.org/abs/2405.18617
Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and
Externí odkaz:
http://arxiv.org/abs/2309.07328
Autor:
Silvestre, Gustavo H., de Lima, Felipe Crasto, Bernardes, Juliana S., Fazzio, Adalberto, Miwa, Roberto H.
Publikováno v:
Phys. Chem. Chem. Phys., 2023,25, 1161-1168
The development of electronic devices based on the functionalization of (nano)cellulose platforms relies upon an atomistic understanding of the structural, and electronic properties of the combined system, cellulose/functional element. In this work,
Externí odkaz:
http://arxiv.org/abs/2208.11742
Publikováno v:
Phys. Rev. Materials 6, 084002 (2022)
Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify that chal
Externí odkaz:
http://arxiv.org/abs/2205.02965
Autor:
Freire, Rafael L. H., de Lima, Felipe Crasto, de Oliveira, Rafael Furlan, Capaz, Rodrigo B., Fazzio, Adalberto
Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficia
Externí odkaz:
http://arxiv.org/abs/2203.09623
Autor:
Sharan, Abhishek, de Lima, Felipe Crasto, Khalid, Shoaib, Miwa, Roberto H., Janotti, Anderson
Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit tw
Externí odkaz:
http://arxiv.org/abs/2111.14135
Autor:
de Lima, Felipe Crasto, Schleder, Gabriel R., Junior, João B. Souza, Souza, Flavio L., Destro, Fabrício B., Miwa, Roberto H., Leite, Edson R., Fazzio, Adalberto
Publikováno v:
Appl. Phys. Lett. 118, 201602 (2021)
Understanding the effects of atomic structure modification in hematite photoanodes is essential for the rational design of high-efficiency functionalizations. Recently it was found that interface modification with Sn/Sb segregates considerably increa
Externí odkaz:
http://arxiv.org/abs/2105.00993
Autor:
Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A., Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennacchio, Daniel, Wilson, Nathaniel, Dong, Jason, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V., Read, Dan, Cano, Jennifer, Janotti, Anderson, Palmstrom, Christopher J.
Publikováno v:
Physical Review Materials, 5, 124207 (2021)
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has el
Externí odkaz:
http://arxiv.org/abs/2012.12633