Physical study of the avalanche breakdown phenomenon in HEMTs

Autor: Elkhou, M., Rousseau, M., Gerard, H., De Jaeger, J.C.

Publikováno v: In Solid State Electronics 2005 49(4):535-544

STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

Autor: Lecourt, F., Douvry, Y., Lesecq, M., Defrance, N., AGBOTON, A., OKODA, E., Hoel, V., De Jaeger, J.C., Chmielowska, M., RENNESSON, S., Chenot, S., Cordier, Y., Lacheze, L., Bouzid, S., Frijlink, P.

Publikováno v: Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013
Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::06b874ae47746fe21d38d67a2bbc5aa0
https://hal.science/hal-00941541

Epitaxial growth of AlN thin films at low temperature by magnetron sputtering technique

Autor: Camus, J., Simon, Quentin, Ait Aissa, K., BENSALEM, S., Le Brizoual, L., Tessier, G., Scudeller, Y., Djouadi, M. A., Cordier, Y., Frayssinet, E., Chmielowska, M., Nemoz, M., Vennegues, P., Chenot, Sébastien, Defrance, N., Lesecq, M., ALTUNTAS, P., Cutivet, A., AGBOTON, A., De Jaeger, J.C.

Publikováno v: European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J-Semiconductor nanostructures towards electronic and optoelectronic device applications IV
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J-Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b659bfbc21a09e4209dae3104fae477a
https://hal.science/hal-00878878

High transconductance on AlGaN/GaN HEMT on (110) silicon substrate

Autor: Gerbedoen, J.C., Soltani, A., Cordier, Y., De Jaeger, J.C.

Publikováno v: Proceedings of 7th European Microwave Integrated Circuits Conference, EuMIC 2012
7th European Microwave Integrated Circuits Conference, EuMIC 2012
7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.413-416

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ad04181e01af87f6b3fc882525bc36ad
https://hal.archives-ouvertes.fr/hal-00814978

Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study

Autor: Mortet, V., Zhang, L., Eckert, M., D'Haen, J., Soltani, A., Moreau, M., Troadec, D., Neyts, E., De Jaeger, J.C., Verbeeck, J., Bogaerts, A., Van Tendeloo, G., Haenen, K., Wagner, P.

Publikováno v: physica status solidi (a)
physica status solidi (a), Wiley, 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩
physica status solidi (a), 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩

In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the depos

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a857d9a19370192cc115b0914429eaae
https://lirias.kuleuven.be/handle/123456789/484872