Zobrazeno 1 - 4
of 4
pro vyhledávání: '"de Graaff, Henk C."'
Autor:
Salm, C., Van Veen, D. T., Holleman, J., Woerlee, P. H., de Graaff, Henk C., van Kranenburg, Herma
Publikováno v:
ESSDERC 1995-Proceedings of the 25th European Solid State Device Research Conference, 131-134
STARTPAGE=131;ENDPAGE=134;TITLE=ESSDERC 1995-Proceedings of the 25th European Solid State Device Research Conference
STARTPAGE=131;ENDPAGE=134;TITLE=ESSDERC 1995-Proceedings of the 25th European Solid State Device Research Conference
The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::98a86bb4822fdb1b8b011a0d2a3bd35b
https://research.utwente.nl/en/publications/72c10ec5-94ee-4865-8133-2736e2bdac06
https://research.utwente.nl/en/publications/72c10ec5-94ee-4865-8133-2736e2bdac06
Autor:
van der Heijden, Mark P., de Graaff, Henk C., de Vreede, Leo C.N., Gajadharsing, John R., Burghartz, Joachim N.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques. Sep2002, Vol. 50 Issue 9, p2176. 9p. 5 Black and White Photographs, 6 Diagrams, 1 Chart, 10 Graphs.
Publikováno v:
IEEE Transactions on Electron Devices. Jan98, Vol. 45 Issue 1, p277. 9p. 2 Diagrams, 12 Graphs.