Zobrazeno 1 - 10
of 12 672
pro vyhledávání: '"cutoff frequency"'
Autor:
Yu‐Seong Seo, Teawoo Ha, Ji Hee Yoo, Su Jae Kim, Yousil Lee, Seungje Kim, Young‐Hoon Kim, SeungNam Cha, Young‐Min Kim, Se‐Young Jeong, Jungseek Hwang
Publikováno v:
Small Science, Vol 4, Iss 11, Pp n/a-n/a (2024)
In the design of optical devices and components, geometric structures and optical properties of materials, such as absorption, refraction, reflection, diffraction, scattering, and trapping, have been utilized. Finding the ideal material with certain
Externí odkaz:
https://doaj.org/article/e83ebbad6efc485ca60ab95ca488bf65
Publikováno v:
Alexandria Engineering Journal, Vol 91, Iss , Pp 30-38 (2024)
This study explores the optimization of a hetero-dielectric tunnel field-effect transistor (HDTFET) structure to improve device performance. By incorporating a high-k oxide pocket in a portion of the source-side gate insulator, a local minimum in the
Externí odkaz:
https://doaj.org/article/08be48c7dd4d499e9bd259eca106a766
Autor:
D.R. Shklyar, N.S. Artekha
Publikováno v:
Fundamental Plasma Physics, Vol 10, Iss , Pp 100053- (2024)
Despite the undoubted importance of having fairly simple analytical expressions for the refractive indices of wave modes in a magnetoactive plasma, such expressions are known only in some particular cases. For electron waves with frequencies much hig
Externí odkaz:
https://doaj.org/article/cbe82515645e4837adba6c472b61fcc9
Publikováno v:
Sensors, Vol 24, Iss 14, p 4702 (2024)
This paper introduces compact Printed Ridge Gap Waveguide (PRGW) phase shifters tailored for millimeter-wave applications, with a focus on achieving wide operating bandwidth, and improved matching and phase balance compared to single-layer technology
Externí odkaz:
https://doaj.org/article/6e34acc616d846e19a46be5995657ed1
Publikováno v:
مجله مدل سازی در مهندسی, Vol 21, Iss 72, Pp 109-121 (2023)
In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor. Despite this benefit, reducing the transconductance of Junctio
Externí odkaz:
https://doaj.org/article/96a13e2ef3484f06b7377a9ece50e0bb
Publikováno v:
Guoji Yanke Zazhi, Vol 23, Iss 2, Pp 312-315 (2023)
AIM: To evaluate the clinical efficacy of femtosecond laser-assisted cataract surgery combined with PanOptix trifocal intraocular lens implantation.METHODS:The retrospective study enrolled 22 cases(26 eyes)of cataract patients who underwent femtoseco
Externí odkaz:
https://doaj.org/article/6f5a66c9599c4837a911c54b602eed54
Autor:
I. P. Storozhenko, S. I. Sanin
Publikováno v:
Radio Physics and Radio Astronomy, Vol 27, Iss 4, Pp 289-298 (2022)
Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ gra
Externí odkaz:
https://doaj.org/article/f24f071e1c48449496a2d1ef638635ac
Publikováno v:
Science and Technology for Energy Transition, Vol 79, p 20 (2024)
In order to improve the dynamic performance of the control system, a variable frequency sliding mode sensorless control strategy based on Extended State Observer (ESO) feedforward compensation was proposed in order to improve the disturbance and jitt
Externí odkaz:
https://doaj.org/article/543c26a410b1458dbb16445d5937b565
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