Výsledky vyhledávání - "crystalline silicon wafers"

Akademický článek

One-Step Fabrication of Inverted Pyramid Textured Silicon Wafers via Silver-Assisted Chemical Etching Combing with Synergism of Polyvinylpyrrolidone (PVP)

Autor: Yuchen Liu, Kousuo Dong, Linsheng Bian, Zisheng Guan

Publikováno v: Crystals, Vol 11, Iss 5, p 459 (2021)

Inverted pyramid-texturing of silicon surface has been proven to have great application potential in silicon solar cells. In this paper, we utilized Ag-assisted chemical etching (Ag–ACE) technology combing with polyvinylpyrrolidone (PVP) to fabrica

Externí odkaz: https://doaj.org/article/079d2210737f45038dbbbd53c41a641b

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One-Step Fabrication of Inverted Pyramid Textured Silicon Wafers via Silver-Assisted Chemical Etching Combing with Synergism of Polyvinylpyrrolidone (PVP)

Autor: Zisheng Guan, Kousuo Dong, Linsheng Bian, Yuchen Liu

Publikováno v: Crystals, Vol 11, Iss 459, p 459 (2021)
Crystals
Volume 11
Issue 5

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c580790c86bdd999009919a15739ae59
https://www.mdpi.com/2073-4352/11/5/459

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Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells

Autor: Jan Schmidt, Antoine Descoeudres, Matthieu Despeisse, Dimitri Zielke, Ralf Gogolin, Christophe Ballif

Publikováno v: Energy Procedia 124 (2017)

In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89a886b473c2037923258ca57e63d4db
https://doi.org/10.1016/j.egypro.2017.09.295

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Akademický článek

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Measurement of Relaxation Time of Excess Carriers in Si and CIGS Solar Cells by Modulated Electroluminescence Technique

Autor: Pradeep R. Nair, Krishnamachari L. Narsimhan, Sanchit Khatavkar, Juzer Vasi, Maikel F.A.M. van Hest, Chinna V. Kannan, Kulasekaran Muniappan, Brij M. Arora, Vijay Kumar, Miguel A. Contreras

Publikováno v: IndraStra Global.

Excess carrier lifetime plays a crucial role in determining the efficiency of solar cells. In this paper, we use the frequency dependence of inphase and quadrature components of modulated electroluminescence (MEL) to measure the relaxation time (deca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f1be1ac9850c1d0c4a235cdcb8e7c54
https://igi.indrastra.com/items/show/60977

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Contactless device for the fast conductivity characterization of a large range semiconductors

Autor: Y. Le Bihan, Denis Mencaraglia, Florent Loete

Publikováno v: International Symposium on Semiconductor Manufacturing (ISSM 2016)
International Symposium on Semiconductor Manufacturing (ISSM 2016), Dec 2016, Tokyo, Japan. 4p., ⟨10.1109/issm.2016.7934522⟩

International audience; We report on the development and application of a brand-new contactless method based on eddy currents with a view to designing a generic apparatus for the characterization of some transport properties of a large range of semic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93a475b4fab438d012c2f417ba195d42
https://hal.archives-ouvertes.fr/hal-01637727

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Novel effects on the fracture strength of poly-crystalline silicon wafers

Autor: Bao, Boyang

Nowadays, silicon wafers are widely used in a number of areas, in particular in the semiconducting and photovoltaic industries. In solar cells, large-grained poly-crystalline silicon wafers have gained popularity due to their low-cost manufacturing w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21c875ab47bbc6386f8234a481ef57d6

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Akademický článek

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Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Autor: Florian Werner, Boris Veith, Jan Schmidt, Rolf Brendel, Dimitri Zielke

Publikováno v: Energy Procedia 8 (2011)

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9231f8307f0a48c534e1d8cc3a058755

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Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

Autor: Florian Werner, Fred Roozeboom, Jan Schmidt, Paul Poodt, Rolf Brendel, Boris Veith, Veronica Tiba

Publikováno v: Applied Physics Letters, 16, 97
Applied Physics Letters, 97(16):162103, 162103-1/3. American Institute of Physics

Using aluminum oxide (Al2 O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p -type and 8.1 cm/s on n -type crystalline silicon wafers. Using spatially separate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b56635c417f9c4310228efa10f69b31
http://resolver.tudelft.nl/uuid:03adddf4-f411-48fe-b3f8-d72005623388

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