Zobrazeno 1 - 10
of 157
pro vyhledávání: '"cryogenic-CMOS"'
Autor:
Munehiro Tada, Koichiro Okamoto, Takahisa Tanaka, Makoto Miyamura, Hiroki Ishikuro, Ken Uchida, Toshitsugu Sakamoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 28-33 (2024)
A performance evaluation of cryogenic CMOS circuit at liquid-helium temperature (4.2K) is conducted using a standard 65nm bulk CMOS for quantum state controller (QSC) applications. The ON-current (Ion) of the core n/pMOSFET are increased by 25% and 9
Externí odkaz:
https://doaj.org/article/fc142c4856a64468bd3a3fd224789a5c
Publikováno v:
Chip, Vol 3, Iss 1, Pp 100082- (2024)
Low temperature complementary metal oxide semiconductor (CMOS) or cryogenic CMOS is a promising avenue for the continuation of Moore's law while serving the needs of high performance computing. With temperature as a control “knob” to steepen the
Externí odkaz:
https://doaj.org/article/1dc7919b5ada4629908c4fcdea9bae84
Autor:
Qiwen Xue, Yuanke Zhang, Mingjie Wen, Xiaohu Zhai, Yuefeng Chen, Tengteng Lu, Chao Luo, Guoping Guo
Publikováno v:
Chip, Vol 2, Iss 4, Pp 100065- (2023)
The development of large-scale quantum computing has boosted an urgent desire for the advancement of cryogenic CMOS (cryo-CMOS), which is a promising scalable solution for the control and read-out interface of quantum bits. In the current work, 180 n
Externí odkaz:
https://doaj.org/article/9686db5e30ca4cd2a0e7e519d656d372
Autor:
Paul R. Genssler, Florian Klemme, Shivendra Singh Parihar, Sebastian Brandhofer, Girish Pahwa, Ilia Polian, Yogesh Singh Chauhan, Hussam Amrouch
Publikováno v:
IEEE Transactions on Quantum Engineering, Vol 4, Pp 1-11 (2023)
Quantum computing can enable novel algorithms infeasible for classical computers. For example, new material synthesis and drug optimization could benefit if quantum computers offered more quantum bits (qubits). One obstacle for scaling up quantum com
Externí odkaz:
https://doaj.org/article/8531733d2f0b4b4894729acba5073515
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 190-197 (2023)
An in-depth understanding of the transient operation of devices at cryogenic temperatures remains experimentally elusive. However, the impact of these transients has recently become important in efforts to develop both electronics to support quantum
Externí odkaz:
https://doaj.org/article/ff559f0ee4f646cf8d9bc2a8fd5387e6
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 22-29 (2023)
In this paper, we present on the cryogenic characterization of short channel 28-nm FD-SOI nMOS and pMOS transistors having widths of the $1 ~\mu \text{m}$ and $0.08 ~\mu \text{m}$ at temperatures ranging from T = 300 K down to T = 10 K. We report, fo
Externí odkaz:
https://doaj.org/article/e35360b0937e4a388874b41841b4ce5a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 289-296 (2022)
We reported temperature-dependent narrow width effects on electrical characteristics of 28-nm CMOS transistors measured at temperature of 77 K-300 K. At cryogenic temperatures, P-MOSFETs appear to have stronger temperature-induced threshold voltage (
Externí odkaz:
https://doaj.org/article/6a0e2ff191f045e8905d4a9b2323c30e
Autor:
Wriddhi Chakraborty, Khandker Akif Aabrar, Jorge Gomez, Rakshith Saligram, Arijit Raychowdhury, Patrick Fay, Suman Datta
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 184-192 (2021)
Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product can address a range of applications such as interface circuits between superconducting (SC) single-flux quantum (SFQ) logic and cryo-dynamic random-access memory
Externí odkaz:
https://doaj.org/article/6468cbb7101b4134992cfc1157974523
Autor:
Rakshith Saligram, Wriddhi Chakraborty, Ningyuan Cao, Yu Cao, Suman Datta, Arijit Raychowdhury
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 193-200 (2021)
Cryogenic CMOS is a crucial component in building scalable quantum computers, predominantly for interface and control circuitry. Further, high-performance computing can also benefit from cryogenic boosters. This necessitates an in-depth understanding
Externí odkaz:
https://doaj.org/article/ffffef510dde49f39a1576d177dfb67d
Autor:
Kenji Ohmori, Shuhei Amakawa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1227-1236 (2021)
Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded
Externí odkaz:
https://doaj.org/article/fc513ad14b8a4bae8b28cb0a89eb344d