Mobility in n-doped wurtzite III-Nitrides

Autor: C.G. Rodrigues, Valder N. Freire, Áurea R. Vasconcellos, Roberto Luzzi

Publikováno v: Materials Research, Vol 6, Iss 1, Pp 01-04 (2003)

A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows

Externí odkaz: https://doaj.org/article/435a0ef680ad46b09f27bd1eb73caaf1

Magneto-transport in (Ga,Mn)As-based alloys and hybrids

Autor: Ye, Shuangli

In der vorliegenden Arbeit wurden die Eigenschaften des Magnetotransports von Legierungen und Hybriden auf (Ga,Mn)As Basis untersucht. In paramagnetischen GaAs:Mn-Schichten, die mittels MOVPE abgeschieden wurden, wurden bei tiefen Temperaturen ungew�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b303c17713f29fc8d5b765161fe51df

Size effect on high temperature variable range hopping in Al+implanted 4H-SiC

Autor: Antonella Parisini, Roberta Nipoti, Andrea Parisini

Publikováno v: Journal of physics. Condensed matter
29 (2017). doi:10.1088/1361-648X/29/3/035703
info:cnr-pdr/source/autori:Parisini, Antonella; Parisini, Andrea; Nipoti, Roberta/titolo:Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC/doi:10.1088%2F1361-648X%2F29%2F3%2F035703/rivista:Journal of physics. Condensed matter (Print)/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:29

The hole transport properties of heavily doped 4H-SiC (Al) layers with Al implanted concentrations of 3 x 10(20) and 5 x 10(20) cm(-3) and annealed in the temperature range 1950-2100 degrees C, have been analyzed to determine the main transport mecha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d405843745539e7f14ccf9ebeed7e32
https://doi.org/10.1088/1361-648x/29/3/035703

Dielectric spectra in molecular single crystals

Autor: Ferid Bashirov, Nail Gaisin

Publikováno v: SCOPUS18951082-2009-7-1-SID58549083736
Open Physics, Vol 7, Iss 1, Pp 79-83 (2009)

A theoretical description of the frequency-dependent, complex dielectric permittivity of molecular single crystals is given within the framework of the relaxation polarization mechanism. The extended angular jump model, accounting for the local symme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a93bcbc680c97d219997a79d6d40f03c
https://dspace.kpfu.ru/xmlui/handle/net/140162

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