Zobrazeno 1 - 10
of 5 809
pro vyhledávání: '"conduction band"'
Autor:
Rustam Y. Rasulov, Voxob R. Rasulov, Mardon K. Nasirov, Makhliyo A. Mamatova, Islomjon A. Muminov
Publikováno v:
East European Journal of Physics, Iss 3, Pp 316-321 (2024)
We have developed a theory of dimensional quantization for nanostructures, both one-dimensional and zero-dimensional, constructed from monoatomic layers of transition metal dichalcogenides (TMDCs). This theory has enabled us to derive expressions for
Externí odkaz:
https://doaj.org/article/6bb6214ac22c4e44993ae4e9ecfe2f67
Autor:
Nasrin Akter, Tanvir Ahmed, Imdadul Haque, Md Kamal Hossain, Gorungo Ray, Md Mufazzal Hossain, Md Sagirul Islam, Md Aftab Ali shaikh, Umme Sarmeen Akhtar
Publikováno v:
Heliyon, Vol 10, Iss 10, Pp e30802- (2024)
ZnO–Cu2O composites were made as photocatalysts in a range of different amounts using an easy, cheap, and environment-friendly coprecipitation method due to their superior visible light activity to remove pollutants from the surrounding atmosphere.
Externí odkaz:
https://doaj.org/article/e089a56a50874222991caeed78926b4b
Publikováno v:
Journal of Applied Science and Engineering, Vol 26, Iss 8, Pp 1169-1173 (2023)
The region of exponential absorption of the spectra of amorphous semiconductors is theoretically investigated using the Davis-Mott approximation method from the Kubo-Greenwood formula. Analytical expressions for the partial absorption spectra for the
Externí odkaz:
https://doaj.org/article/5f6427d90a8c477da2e19a950159b410
Publikováno v:
Micromachines, Vol 15, Iss 4, p 512 (2024)
In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µFE) and bias stability of ITO/a-IGZO heterojunction TF
Externí odkaz:
https://doaj.org/article/6641f13d879d487e9b5460913ef64d5a
Akademický článek
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Autor:
Juhan Kim, Dowon Song, Hwanhui Yun, Jaehyeok Lee, Jae Ha Kim, Jae Hoon Kim, Bongju Kim, Kookrin Char
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract Reducing the leakage current through the gate oxide is becoming increasingly important for power consumption reduction as well as reliability in integrated circuits as the semiconducting devices continue to scale down. Here, this work report
Externí odkaz:
https://doaj.org/article/074cf92c6f2444cebd3bcbf4a133ee52
Autor:
G.T. Sayah
Publikováno v:
Results in Optics, Vol 11, Iss , Pp 100390- (2023)
The power conversion efficiency (PCE) of thin-film solar cells (TFSCs) has drastically increased in the last few years. In this regard, perovskite solar cells (PSCs) come on the top thanks to their bandgap tunability, lower fabrication cost, and high
Externí odkaz:
https://doaj.org/article/2b7d5ff06f7d4de09ee39b54908b4362
Publikováno v:
Materials Research Express, Vol 11, Iss 6, p 065904 (2024)
This study examines the physical properties of germanium-based halide perovskite through Density Functional Theory (DFT) computations. The physical, optical, mechanical, and magnetic properties of NaGeX _3 (X = Cl, Br, and I) were examined with the e
Externí odkaz:
https://doaj.org/article/be0860bc8b3043ea9d1951144bcbc992
Publikováno v:
Energies, Vol 16, Iss 23, p 7889 (2023)
Benefiting from the advantages of a high absorption coefficient, a long charge diffusion length, excellent carrier mobility, and a tunable bandgap, three-dimensional (3D) metal halide perovskites exhibit great potential for application in solar cells
Externí odkaz:
https://doaj.org/article/e98f79c7fba64d2e8fb33ad3e16f0050
Akademický článek
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