Zobrazeno 1 - 10
of 88
pro vyhledávání: '"complementary metal oxide semiconductor technology"'
Publikováno v:
Frontiers in Electronics, Vol 5 (2024)
This study introduces a pioneering design for leaky integrate-and-fire (LIF) neurons by integrating memristor devices with CMOS transistors, thereby forming an innovative hybrid CMOS/memristor neuron circuit. Employing Pt/TaOx/Ta as the memristor dev
Externí odkaz:
https://doaj.org/article/f140d548dddc4792b3f824fb9d3f0242
Autor:
Correia, Ana Paula Pinto
Despite the strong developments in complementary metal-oxide-semiconductor (CMOS) or non-CMOS technologies such as, in oxide thin-film transistors (TFTs), their nonidealities and constraints impact on the circuits performance. This aspect is even mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1437::41b0b221d0b2643ab41abf111b04a3c0
https://hdl.handle.net/10362/147690
https://hdl.handle.net/10362/147690
Autor:
Hamid Rashidi, Abdalhossein Rezai
Publikováno v:
The Journal of Engineering (2017)
Quantum-dot cellular automata (QCA) is a new and promising computation paradigm, which can be a viable replacement for the complementary metal–oxide–semiconductor technology at nano-scale level. This technology provides a possible solution for im
Externí odkaz:
https://doaj.org/article/330f1985ea284349b638622bba3c85de
Akademický článek
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Autor:
Sara Hashemi, Keivan Navi
Publikováno v:
The Journal of Engineering (2014)
Quantum-dot cellular automata (QCA) is a novel nanotechnology which is considered as a solution to the scaling problems in complementary metal oxide semiconductor technology. In this Letter, a robust one layer crossover scheme is introduced. It uses
Externí odkaz:
https://doaj.org/article/a9d3aa7e437d48a98062e4a46f8f4afe
Publikováno v:
The Journal of Engineering (2014)
Transistor level implementation of division methodology using ancient Vedic mathematics is reported in this Letter. The potentiality of the ‘Dhvajanka (on top of the flag)’ formula was adopted from Vedic mathematics to implement such type of divi
Externí odkaz:
https://doaj.org/article/2c2d2d5c93fd4cef9bab90113b006d40
Autor:
Корнєв, Володимир Павлович
Магістерська дисертація складається із 4 осн. розд, 95 рис., 28 табл., 7 дод., 43 дж. Загальний обсяг дисертації становить 207 сторінок, в тому чис
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2635::41cc18304dcd4c63fb6501714b9c694d
https://ela.kpi.ua/handle/123456789/38457
https://ela.kpi.ua/handle/123456789/38457
Autor:
Kufcsák, András
Biomedicine requires highly sensitive and efficient light sensors to analyse light-tissue or light-sample interactions. Single-photon avalanche diode (SPAD) sensors implemented with complementary metal-oxide-semiconductor (CMOS) technology have a gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______463::90991165dd1ea46bf524f1f9d38690e4
https://hdl.handle.net/1842/36964
https://hdl.handle.net/1842/36964
Autor:
Daivid Fowler, Delphine Marris-Morini, Eric Cassan, Pavel Cheben, Frederic Boeuf, Sylvain Guerber, Charles Baudot, Diego Perez-Galacho, Daniel Benedikovic, Carlos Alonso-Ramos, Vladyslav Vakarin, Xavier Le Roux, Cecilia Dupre, Bertrand Szelag, Laurent Vivien, Guillaume Marcaud
Publikováno v:
SPIE OPTO Smart Photonic and Optoelectronic Integrated Circuits XXII
SPIE OPTO Smart Photonic and Optoelectronic Integrated Circuits XXII, Jan 2020, San Francisco, California, United States. ⟨10.1117/12.2543489⟩
Smart Photonic and Optoelectronic Integrated Circuits XXII
SPIE OPTO Smart Photonic and Optoelectronic Integrated Circuits XXII, Jan 2020, San Francisco, California, United States. ⟨10.1117/12.2543489⟩
Smart Photonic and Optoelectronic Integrated Circuits XXII
Silicon nanophotonics represents a scalable route to deploy complex optical integrated circuits for multifold applications, markets, and end-users. Most recently, applications such as optical communications and interconnects, sensing, as well as quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b557a7ee650d80d735cd955c4952d163
https://hal.archives-ouvertes.fr/hal-02539636/document
https://hal.archives-ouvertes.fr/hal-02539636/document
Autor:
Benedikovic, Daniel, Virot, Léopold, Aubin, Guy, Hartmann, Jean-Michel, Amar, Farah, Szelag, Bertrand, Le Roux, Xavier, Alonso-Ramos, Carlos, Crozat, Paul, Cassan, Eric, Marris-Morini, Delphine, Baudot, Charles, Boeuf, Frédéric, Fédéli, Jean-Marc, Kopp, Christophe, Vivien, Laurent
Publikováno v:
SPIE OPTO Integrated Optics: Devices, Materials, and Technologies XXIV
SPIE OPTO Integrated Optics: Devices, Materials, and Technologies XXIV, Jan 2020, San Francisco, United States. ⟨10.1117/12.2543499⟩
SPIE OPTO Integrated Optics: Devices, Materials, and Technologies XXIV, Jan 2020, San Francisco, United States. ⟨10.1117/12.2543499⟩
International audience; Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud ser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2a131a59c46715a5d101cbb29608832f
https://hal.archives-ouvertes.fr/hal-02539646
https://hal.archives-ouvertes.fr/hal-02539646