Zobrazeno 1 - 10
of 1 305
pro vyhledávání: '"compact modeling"'
Autor:
Mahmoud Darwish, László Pohl
Publikováno v:
Electronic Materials, Vol 5, Iss 1, Pp 17-29 (2024)
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), pa
Externí odkaz:
https://doaj.org/article/7889742e9f2c4bb9a0aaddd790fe66c8
Autor:
Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
Publikováno v:
IEEE Access, Vol 12, Pp 23881-23886 (2024)
Accurate current-voltage (I-V) modeling based on the Berkeley short-channel insulated-gate field-effect transistor model (BSIM) is pivotal for integrated circuit simulation. However, the current BSIM model does not support a buried-channel-array tran
Externí odkaz:
https://doaj.org/article/be40799b6d1e4e5da92ee9cb9d41dd5d
Autor:
Sueyeon Kim, Insoo Choi, Sangki Cho, Myounggon Kang, Seungjae Baik, Changho Ra, Jongwook Jeon
Publikováno v:
IEEE Access, Vol 11, Pp 97778-97785 (2023)
The high data throughput and high energy efficiency required recently are increasingly difficult to implement due to the von Neumann bottleneck. As a way to overcome this, Logic-in-Memory (LiM) technology has recently been receiving a lot of attentio
Externí odkaz:
https://doaj.org/article/3e4bccd0e0ce4ec099323c37c01f14ea
Autor:
Mykola Fomin, Francisco. Pasadas, Enrique G. Marin, Alberto Medina‐Rull, Francisco. G. Ruiz, Andrés. Godoy, Ihor Zadorozhnyi, Guillermo Beltramo, Fabian Brings, Svetlana Vitusevich, Andreas Offenhaeusser, Dmitry Kireev
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of graphene‐on‐silicon heterostructures as solution‐gated transistors for bioelectr
Externí odkaz:
https://doaj.org/article/ede4d1e92d9b4c09b6c3016f41ab98a6
Publikováno v:
Applied Sciences, Vol 13, Iss 20, p 11387 (2023)
Accurate modeling of threshold voltage is necessary in the integrated circuit design of strained silicon devices. Thoroughly researching the factors that affect threshold voltage and establishing a more precise threshold voltage model, can provide es
Externí odkaz:
https://doaj.org/article/af1458f4d40f4c39b6af7e515ca03dbe
Autor:
Jack Hutchins, Shamiul Alam, Andre Zeumault, Karsten Beckmann, Nathaniel Cady, Garrett S. Rose, Ahmedullah Aziz
Publikováno v:
IEEE Access, Vol 10, Pp 115513-115519 (2022)
The predictive capability of existing physical descriptions of multi-state devices (e.g., oxide memristors, ferroelectrics, antiferroelectric, etc.) cannot be fully leveraged in circuit simulations due to practical limitations regarding the complexit
Externí odkaz:
https://doaj.org/article/410ee87835ef4a0693fb66634c2fd433
Autor:
S. Pati Tripathi, S. Bonen, A. Bharadwaj, T. Jager, C. Nastase, S. Iordanescu, G. Boldeiu, M. Pasteanu, A. Nicoloiu, I. Zdru, A. Muller, S. P. Voinigescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 600-610 (2022)
A compact analytical model is proposed along with a parameter extraction methodology to accurately capture the steady-state (DC) sequential tunneling current observed in the subthreshold region of the transfer $I_{DS}-V_{GS}$ characteristics of MOSFE
Externí odkaz:
https://doaj.org/article/3f9a26e2ea734717ac17e26ff7bac002
Autor:
Rodrigo Picos, Mohamad Moner Al Chawa, Carola De Benito, Stavros G. Stavrinides, Leon O. Chua
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 466-473 (2022)
Memristors were first proposed in 1971 by Leon Chua. These devices are usually regarded as being one of the newest fundamental breakthrough for electronics. Their role in designing new electronic systems is expected to be an important, key-factor. As
Externí odkaz:
https://doaj.org/article/dd335d60bd694486a280f9deb6fca011
Autor:
Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 416-423 (2022)
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injec
Externí odkaz:
https://doaj.org/article/e7a6752fe9fb43a7b35b54c1a5d279c7
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