Zobrazeno 1 - 10
of 678
pro vyhledávání: '"ching-ting lee"'
Autor:
Hsin-Ying Lee, Mu-Ju Wu, Shao-Yu Chu, Ting-Chun Chang, Yi-Feng Tung, Tsung-Han Yeh, Ching-Ting Lee
Publikováno v:
Applied Surface Science Advances, Vol 25, Iss , Pp 100679- (2025)
In this study, using a sensing membrane composed of p-type reduced graphene oxide (rGO)-decorated hydrothermally synthesized n-type gallium oxide (Ga2O3) nanorods, nitrogen dioxide (NO2) gas sensors were successfully fabricated. The characteristics o
Externí odkaz:
https://doaj.org/article/02324d6466ef4840aca30c5997824bbf
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 657 (2024)
In this work, guanidinium (GA+) was doped into methylammonium lead triiodide (MAPbI3) perovskite film to fabricate perovskite solar cells (PSCs). To determine the optimal formulation of the resulting guanidinium-doped MAPbI3 ((GA)x(MA)1−xPbI3) for
Externí odkaz:
https://doaj.org/article/17f9d1c4e9324ee48de0aee363d3d1c9
Autor:
Zhang Xing, Seonghyun Nam, Dahee Kim, Yongmin Baek, Dohyun Kim, Youngseo Park, Hsin-Ying Lee, Ching-Ting Lee, Kyusang Lee, Junseok Heo
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 7, Pp n/a-n/a (2022)
In addition to direct solar illumination to the photovoltaic cell, the albedo effect provides a unique opportunity to enhance energy harvesting. However, conventional solar cells are inefficient albedo energy harvesters because the rear side of the c
Externí odkaz:
https://doaj.org/article/dc29e68813ea4886a36cef89fb96544c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 393-399 (2021)
In this work, the properties of gallium oxide (Ga2O3) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel
Externí odkaz:
https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04
Publikováno v:
IEEE Access, Vol 8, Pp 158941-158946 (2020)
In this study, to compare the performance of planar, fin-submicron, and fin-nanochannel array-structured AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs), the scaling effect of fin-channels was investigated by decreas
Externí odkaz:
https://doaj.org/article/dea43edf648b4f338efca224b983b305
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 1064 (2023)
In this work, Ga2O3 nanorods were converted from GaOOH nanorods grown using the hydrothermal synthesis method as the sensing membranes of NO2 gas sensors. Since a sensing membrane with a high surface-to-volume ratio is a very important issue for gas
Externí odkaz:
https://doaj.org/article/81b1bba675fc400e8e02e36d5a1608b0
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 63-67 (2018)
In this paper, high performance quadruple gate-embedded T structured GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) were fabricated using laser interference photolithography method and photoelectrochemical oxidation
Externí odkaz:
https://doaj.org/article/cac786ae06b043f3afee249707b76ce3
Autor:
Ching-Ting Lee, Hung-Yin Juo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 183-188 (2018)
In this paper, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photoelectrochemical etch
Externí odkaz:
https://doaj.org/article/eb71c7a44ed948568a332fae6f5b31af
Publikováno v:
Sensors, Vol 20, Iss 21, p 6159 (2020)
In this work, Ga2O3 films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O2) plasma. To improve the quality of Ga2O3 films, they were annealed in an O2 ambient
Externí odkaz:
https://doaj.org/article/8ddb96045e2142c4a5f55c880a70c80d
Autor:
Ching-Ting Lee, Chun-Chi Wang
Publikováno v:
AIP Advances, Vol 8, Iss 4, Pp 045014-045014-6 (2018)
To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195
Externí odkaz:
https://doaj.org/article/caac5c96fbb1405798c3d59ca3fc9569