Zobrazeno 1 - 1
of 1
pro vyhledávání: '"charge localization center"'
Publikováno v:
Конденсированные среды и межфазные границы, Vol 21, Iss 1, Pp 93-98 (2019)
Purpose. Layers of InxAl1-xAs, grown at the Novosibirsk Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Science that are deliberately unalloyed by means of the MBE method on a semi-insulating substrate InP are wide
Externí odkaz:
https://doaj.org/article/bd9f9ae8a8494ebda78a4e3bfb12b558
