The Energy Level Alignment at the Buffer/Cu(In,Ga)Se2 Thin‐Film Solar Cell Interface for CdS and GaOx

Autor: Donald Valenta, Hasan Arif Yetkin, Tim Kodalle, Jakob Bombsch, Raul Garcia‐Diez, Claudia Hartmann, Shigenori Ueda, Roberto Félix, Johannes Frisch, Lucas Bodenstein‐Dresler, Regan G. Wilks, Christian A. Kaufmann, Marcus Bär

Publikováno v: Advanced Materials Interfaces, Vol 11, Iss 13, Pp n/a-n/a (2024)

Abstract Sputter‐deposited GaOx (i.e., oxygen‐deficient gallium oxide) films are evaluated as a potential replacement for the standard CdS buffer layers in Cu(In,Ga)Se2 (CIGSe) based thin‐film photovoltaics. The energy level alignment at the Ga

Externí odkaz: https://doaj.org/article/e86b7412d85a4050acde412c67d4516c

Variations in the Chemical and Electronic Impact of Post-Deposition Treatments on Cu(In,Ga)(S,Se)2 Absorbers

Autor: Mezher, M, Mansfield, LM, Horsley, K, Yang, W, Blum, M, Weinhardt, L, Ramanathan, K, Heske, C

Publikováno v: ACS Applied Energy Materials, vol 2, iss 12

We present a comparative study that focuses on the variability of post-deposition treatments (NaF-PDT and KF-PDT) and their impact on the chemical and electronic structure of chalcopyrite thin film solar cell absorbers. For this purpose, two "extreme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2632894b7e4823528e83ee8ac2400006
https://escholarship.org/uc/item/9965x7nn

Soft X-ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface

Autor: Mezher, M, Garris, R, Mansfield, LM, Blum, M, Hauschild, D, Horsley, K, Duncan, DA, Yang, W, Bär, M, Weinhardt, L, Ramanathan, K, Heske, C

Publikováno v: ACS applied materials & interfaces, vol 8, iss 48
Mezher, M; Garris, R; Mansfield, LM; Blum, M; Hauschild, D; Horsley, K; et al.(2016). Soft X-ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2Interface. ACS Applied Materials and Interfaces, 8(48), 33256-33263. doi: 10.1021/acsami.6b09245. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/9zf3r91v

© 2016 American Chemical Society. The chemical structure of the Zn(O,S)/Cu(In,Ga)Se2interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectrosc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::77cf40f5adfc03cdfe919c126feff643
https://escholarship.org/uc/item/9zf3r91v

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