Al catalyzed growth of silicon nanowires and subsequent in situ dry etching of the catalyst for photovoltaic application

Autor: Arnaud Brioude, Sébastien Noël, Cyril Cayron, Christine Morin, Simon Perraud, Pascal Faucherand, Vasiliki Tileli, Joel Dufourcq, David Kohen, Michel Levis

Publikováno v: physica status solidi (a)
physica status solidi (a), 2011, 208 (11), pp.2676-2680. ⟨10.1002/pssa.201127072⟩
physica status solidi (a), Wiley, 2011, 208 (11), pp.2676-2680. ⟨10.1002/pssa.201127072⟩

Aluminum-catalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si wafer by chemical vapor deposition at 600°C. The arrays showed a low optical total reflectance in the visible light spectrum, with a minimum of 2% around 450nm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8174461e85d8cbd1abb768a5f054affa
https://hal.science/hal-01597181