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Carrier–Phonon Interaction Induced Large Negative Thermal‐Optic Coefficient at Near Band Edge of Quasi‐2D (PEA)2PbBr4 Perovskite.

Autor: Wu, Sheng‐Chan^1,2 (AUTHOR), Wu, Chun‐Sheng¹ (AUTHOR), Chien, Ching‐Hang³ (AUTHOR), Zhang, Yu‐Wei¹ (AUTHOR), Yang, Chung‐Xian¹ (AUTHOR), Liu, Cheng¹ (AUTHOR), Li, Ming‐Hsien⁴ (AUTHOR), Lin, Chen‐Fu¹ (AUTHOR), Wu, Yu‐Hao⁵ (AUTHOR), Lin, Bi‐Hsuan⁵ (AUTHOR), Chou, Yu‐Hsun¹ (AUTHOR), Chang, Yia‐Chung² (AUTHOR) yiachang@gate.sinica.edu.tw, Chen, Peter^1,6 (AUTHOR) petercyc@mail.ncku.edu.tw, Hsu, Hsu‐Cheng¹ (AUTHOR) hsuhc@mail.ncku.edu.tw

Publikováno v: Advanced Functional Materials. 6/19/2023, Vol. 33 Issue 25, p1-11. 11p.

Effect of the charge-carrier–phonon interaction on the fundamental 1/f voltage noise

Autor: Kirill Kazakov

Publikováno v: Physical Review A. 106

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a87bb62b1b1acba5b0c8ed58307651ba
https://doi.org/10.1103/physreva.106.062214

Carrier–phonon interaction of GaAs/Al$$_{0.3}$$Ga$$_{0.7}$$As quantum dots grown by droplet epitaxy

Autor: Jong Su Kim, Il Ki Han, Inah Yeo, Jin Dong Song

Publikováno v: Journal of Materials Science: Materials in Electronics. 31:16338-16342

We examined several types of GaAs/Al $$_{0.3}$$ Ga $$_{0.7}$$ As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton–phonon couplin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e258944e2e453cf9f0f7c6a2dd6d4387
https://doi.org/10.1007/s10854-020-04183-z

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