Zobrazeno 1 - 10
of 153
pro vyhledávání: '"c-Si solar Cell"'
Autor:
Fabian Vargas, Ronald Nelson, Dario Espinoza, Ivan Brito, Laura Sánchez-Muñoz, Pere Alemany, Sergio Ortiz, Pablo Ferrada, Alifhers Mestra, Jaime Llanos
Publikováno v:
Molecules, Vol 28, Iss 23, p 7924 (2023)
[Eu(3DPIQC)3] (where DPIQC = 3-(diphenyl phosphoryl)-1-isoquinolinecarboxylate), a luminescent europium complex with antenna ligands, has been carefully embedded within a polyvinyl butyral (PVB) matrix and the resulting material was used to prepare f
Externí odkaz:
https://doaj.org/article/c60ae0dbdeba445595c59c47947efc95
Publikováno v:
Applied Sciences, Vol 12, Iss 4, p 1854 (2022)
In the competition of solar cell efficiency, besides top-performance multijunction cells, tandem cells based on perovskites are also breaking efficiency records to enter into the 30% range. Their design takes advantage of the rapid development of per
Externí odkaz:
https://doaj.org/article/1a03938148894e489cf6bb46830af673
Publikováno v:
Energies, Vol 14, Iss 14, p 4106 (2021)
In order to analyze the effects of various sizes of pyramid structure on solar cell characteristics, a pyramid structure was formed on the wafer through various etching processes. In this paper, etching was performed using one-step etching processes
Externí odkaz:
https://doaj.org/article/1fd29a8944c544aea3872817585a30b2
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract Crystalline-Si (c-Si) solar cell with black Si (b-Si) layer at the rear was studied in order to develop c-Si solar cell with sub-band gap photovoltaic response. The b-Si was made by chemical etching. The c-Si solar cell with b-Si at the rear
Externí odkaz:
https://doaj.org/article/9fae7a2d0f524685bd54f2797b4c47ec
Akademický článek
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Publikováno v:
Applied Sciences, Vol 10, Iss 13, p 4554 (2020)
Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ),
Externí odkaz:
https://doaj.org/article/32af592a23ab4796b25a4d7b4011f8e4
Publikováno v:
Energies, Vol 13, Iss 12, p 3057 (2020)
In this paper, the relationship between coordination complexes and electrical properties according to the bonding structure of boron and silicon was analyzed to optimize the p–n junction quality for high-efficiency n-type crystalline solar cells. T
Externí odkaz:
https://doaj.org/article/e0fd728e46d54ae794f67139c6efacf7
Autor:
Kwan Hong Min, Sungjin Choi, Myeong Sang Jeong, Sungeun Park, Min Gu Kang, Jeong In Lee, Yoonmook Kang, Donghwan Kim, Hae-Seok Lee, Hee-eun Song
Publikováno v:
Energies, Vol 13, Iss 7, p 1803 (2020)
A thin silicon oxide (SiOx) layer (thickness: 1.5–2.0 nm) formed at an Al2O3/Si interface can enhance the interface properties. However, it is challenging to control the characteristics of thin SiOx layers because SiOx forms naturally during Al2O3
Externí odkaz:
https://doaj.org/article/89db6142913c4b64a990cc36f0eabdce
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Autor:
Olindo Isabella, S. Mirabella, Robert Macaluso, Antonino Gulino, D. Scire, Miro Zeman, Isodiana Crupi, Mauro Mosca
Publikováno v:
Solid-State Electronics, 185
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f0634e2d736953f2c60551db3873900
http://hdl.handle.net/10447/514001
http://hdl.handle.net/10447/514001
