Zobrazeno 1 - 10
of 15 844
pro vyhledávání: '"bipolar junction"'
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 4, Pp 1-7 (2024)
This paper introduces a new device concept and outlines the fabrication process of a bipolar junction transistor based on an IGZO/NiO/PbSe nanoband array heterostructure. We performed comprehensive electrical property testing and characterization ana
Externí odkaz:
https://doaj.org/article/c2919c7a2797415b9710abbe22525a50
Autor:
Rinku Rani Das, Alex James
Publikováno v:
IEEE Access, Vol 12, Pp 462-470 (2024)
Multi-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have e
Externí odkaz:
https://doaj.org/article/f7fd11d1dcfc41b8a302f2e7e9a33090
Autor:
Linta Khalil, Kamran Liaquat Bhatti, Kiran Khalil, Haider Bin Tariq, Salman Khalil, Muhammad Zahid Shafique
Publikováno v:
Energy Reports, Vol 9, Iss , Pp 151-157 (2023)
The high-frequency standard magnetic links were recently considered viable candidates for construction of the medium-voltage power converters, rather than link with the common dc specialized magnetic materials, like nano-crystalline and the amorphous
Externí odkaz:
https://doaj.org/article/f8e4fe91cc45452885e241dbaabbe7ec
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 851 (2024)
Two-dimensional layered materials, characterized by their atomically thin thicknesses and surfaces that are free of dangling bonds, hold great promise for fabricating ultrathin, lightweight, and flexible bipolar junction transistors (BJTs). In this p
Externí odkaz:
https://doaj.org/article/efdca7f32d46495d8cec6a0c70dc6c68
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 718 (2024)
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertic
Externí odkaz:
https://doaj.org/article/71868d2e587d4f2ebdbf36c1fcc08dad
Autor:
Xiaonian Liu, Zichen Yang
Publikováno v:
IEEE Access, Vol 11, Pp 86480-86488 (2023)
Bipolar junction transistors (BJT) are widely used integrated devices for analog circuits. For most of analog applications, the process variation and the match performance of BJT pairs are critical for the circuit design. Vertical BJT device has adva
Externí odkaz:
https://doaj.org/article/7f2515aa205146f4b139701a370066db
Publikováno v:
IEEE Access, Vol 11, Pp 60758-60762 (2023)
The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure. This r
Externí odkaz:
https://doaj.org/article/e16af94ec46e42ccbb240aac17e8f33a
Publikováno v:
Sensors, Vol 23, Iss 24, p 9824 (2023)
This paper introduces a new design of silicon nanowire (Si NW) phototransistor (PT) arrays conceived explicitly for improved CMOS image sensor performance, and comprehensive numerical investigations clarify the characteristics of the proposed devices
Externí odkaz:
https://doaj.org/article/17813f495efb41c7a73eb6f917070c08
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.