Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor

Autor: Lei Li, Ze Hong Li, Yu Zhou Wu, Xiao Chi Chen, Jin Ping Zhang, Min Ren, Yuan Jian, Bo Zhang

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 8, Pp 1043-1049 (2020)

The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-

Externí odkaz: https://doaj.org/article/3c6b46a674e646299f678e151fea3889

Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Autor: Ali Ammar, Mihai Lazar, Bertr Vergne, Sigo Scharnholz, Luong Viet Phung, Camille Sonneville, Christophe Raynaud, Herve Morel, Dominique Planson, Marcin Zielinski

Publikováno v: 2022 International Semiconductor Conference (CAS)
2022 International Semiconductor Conference (CAS 2022)
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩

International audience; In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabricati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30a0bd81732020fdf26aff6385feb5cc
https://hal.science/hal-03856578/file/CAS_Final_AMMAR_Ali_ml_hal.pdf

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Effect of Plasma Treatment on Metal Oxide p–n Thin Film Diodes Fabricated at Room Temperature

Autor: Khong, YJ, Niang, KM, Han, S, Coburn, NJ, Wyatt-Moon, G, Flewitt, AJ

Funder: Cambridge Trust; Id: http://dx.doi.org/10.13039/501100003343
There is a need for a good quality thin film diode using a metal oxide p–n heterojunction as it is an essential component for the realization of flexible large‐area electro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::527728d63d969830b691aa37c9659d56

Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications

Autor: Anders Hallén, A. Yu. Kuznetsov, Viktor Bobal, K. E. Kvamsdal, Hussein M. Ayedh, Francis Chi-Chung Ling

Publikováno v: Journal of Physics D: Applied Physics. 54:455106

Publisher Copyright: © 2021 IOP Publishing Ltd. Controlling the carbon vacancy (V-C) in silicon carbide (SiC) is one of the major remaining bottleneck in manufacturing of high voltage SiC bipolar devices, because V-C provokes recombination levels in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4be0fc51a2c7a9356c228a66793e2b8
https://doi.org/10.1088/1361-6463/ac19df