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pro vyhledávání: '"beyond-CMOS"'
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Autor:
Shadi Sheikhfaal, Ronald F. Demara
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 62-70 (2020)
Biological memory structures impart enormous retention capacity while automatically providing vital functions for chronological information management and update the resolution of the domain and episodic knowledge. A crucial requirement for hardware
Externí odkaz:
https://doaj.org/article/ccfde5d676bf4f9e957288e4f328d040
Autor:
Huichu Liu, Sasikanth Manipatruni, Daniel H. Morris, Kaushik Vaidyanathan, Dmitri E. Nikonov, Tanay Karnik, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 1-9 (2019)
The supply voltage scaling has become increasingly challenging in the advanced CMOS technology due to the threshold voltage requirement for transistor OFF leakage, limiting the system energy efficiency. Spintronic logic utilizes the physical quantity
Externí odkaz:
https://doaj.org/article/69fc544b79d748f1b0b900a927396e46
Autor:
Dmitri E. Nikonov, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 75-84 (2019)
Neural network circuits and architectures are currently under active research for applications to artificial intelligence and machine learning. Their physical performance metrics (area, time, and energy) are estimated. Various types of neural network
Externí odkaz:
https://doaj.org/article/b1014230227544fb9c2c1f55d4ab8cd4
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 10-18 (2019)
The energy and delay reductions from CMOS scaling have stagnated, motivating the search for a CMOS replacement. Spintronic devices are one of the promising beyond-CMOS alternatives. However, they exhibit high switching error rates of 1% or more when
Externí odkaz:
https://doaj.org/article/c080bf36177b4f93bd66c9e90fc72628
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 34-42 (2019)
Computational scaling beyond silicon electronics based on Moore's law requires the adoption of alternate state variables such as electronic spin. Multiple research efforts are underway exploring both Boolean and non-Boolean design space using spin de
Externí odkaz:
https://doaj.org/article/9cea1abd162741b38021e92ba4cbb97b
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 85-93 (2019)
In this article, we perform a uniform benchmarking for the convolutional neural network (CoNN) based on the cellular neural network (CeNN) using a variety of beyond-CMOS technologies. Representative charge-based and spintronic device technologies are
Externí odkaz:
https://doaj.org/article/b98a77aec6b34d3abcead9f278d1ed9e
Autor:
Olalekan Afuye, Xiang Li, Felicia Guo, Debdeep Jena, Daniel C. Ralph, Alyosha Molnar, Huili Grace Xing, Alyssa Apsel
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 197-205 (2019)
This article introduces a circuits model for a proposed spin-based device called a spin-orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnetic
Externí odkaz:
https://doaj.org/article/934b0ab922534de6b58c431afd366a0b
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 1, Pp 35-43 (2018)
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates. In this paper, the TIGFET technol
Externí odkaz:
https://doaj.org/article/19949c6140404e3ebccaecebf503e7e4