Zobrazeno 1 - 10
of 4 957
pro vyhledávání: '"barrier height"'
Publikováno v:
Journal of Information Display, Pp 1-7 (2024)
This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass grea
Externí odkaz:
https://doaj.org/article/bd89fba2d366436dabdd16e13b8216c8
Publikováno v:
International Journal of Electrical Power & Energy Systems, Vol 161, Iss , Pp 110172- (2024)
The instability of the inverse problem is caused by its nonlocal and non-causal nature. This study addresses the inverse problem of determining the physical parameters of semiconductor devices. Based on statistical inversion theory, the probability d
Externí odkaz:
https://doaj.org/article/e93b4bb0f7104d6d87c0a90e73ac30ab
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 379-383 (2024)
Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in
Externí odkaz:
https://doaj.org/article/d2d22e7f8705479d83c627f916799813
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
SiliconPV Conference Proceedings, Vol 1 (2024)
Transition metal oxide films (TMO) as passivating contacts with improved opto-electronic characteristics play an important role in improving the silicon solar cell device efficiency. In this report, the effect of sputtering power on the optical prope
Externí odkaz:
https://doaj.org/article/02eb6ddbfdcf4b129b91d21d86a93a20
Autor:
Jingyi Ma, Jina Wang, Quan Chen, Shengdi Chen, Mengmeng Yang, Yiming Sun, Zhaoqiang Zheng, Nengjie Huo, Yong Yan, Jingbo Li, Wei Gao
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers. However, there has been a lack of investigation into all‐2D
Externí odkaz:
https://doaj.org/article/643686b3db27428c8a50f095b70c23bd
Autor:
Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Dirk König, Sean C. Smith, Thomas Mikolajick, Jens Trommer
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Doping silicon on the nanoscale by the intentional introduction of impurities into the intrinsic semiconductor suffers from effects such as dopant deactivation, random dopant fluctuations, out‐diffusion, and mobility degradation. This pape
Externí odkaz:
https://doaj.org/article/cc872ae237864610802310a42741a084
Publikováno v:
Electronic Materials, Vol 4, Iss 2, Pp 62-79 (2023)
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade
Externí odkaz:
https://doaj.org/article/d366bf106e8b4a9991556131497982ab
Protective Effect of Vertical Sunflower Stalk Sand Barriers Under Different Configuration Parameters
Publikováno v:
Shuitu baochi tongbao, Vol 43, Iss 2, Pp 148-155 (2023)
[Objective] The influences of barrier height (H), porosity (P), and row spacing (R) on the erosion protection of a vertical sunflower sand barrier were studied in order to provide a theoretical basis for optimizing the parameter configuration of a ve
Externí odkaz:
https://doaj.org/article/220104e452f64132933050c711f5fdea
Publikováno v:
Chemical Physics Impact, Vol 7, Iss , Pp 100350- (2023)
The development of photodetector technology is the outcome of diverse research in materials science, device engineering, and manufacturing methods. Hence, we synthesized p-CuO@n-Si, p-NiO@n-Si, p-CuO/NiO@n-Si and p-CuO/NiO-TX-100@n-Si Schottky Barrie
Externí odkaz:
https://doaj.org/article/fc47d5d06490485fbaa55521c80aa933