Zobrazeno 1 - 1
of 1
pro vyhledávání: '"band to band tunneling. gate workfunction"'
Autor:
Zahra Ahangari
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 2, Pp 11-19 (2024)
In this paper, an innovative vertical bi-channel tunnel field effect transistor is presented that exploits line tunneling mechanism to achieve improved electrical performance. In this device, the source contains germanium, while the channel and drain
Externí odkaz:
https://doaj.org/article/eacf52f5fcc54313864e48492aec76b7
