Zobrazeno 1 - 10
of 2 021
pro vyhledávání: '"atomic layer deposition (ALD)"'
Publikováno v:
Journal of Information Display, Vol 25, Iss 2, Pp 179-185 (2024)
This study presents the development of multi-channel thin-film transistors (TFTs) using plasma-enhanced atomic layer deposition (PEALD) to stack layers of IGZO/Al2O3, with the number of stacking layers ranging from 1 to 10 (1S, 3S, 5S and 10S). To op
Externí odkaz:
https://doaj.org/article/dc6ca49a2eca4831b6191939b7c78334
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 9-16 (2024)
Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO
Externí odkaz:
https://doaj.org/article/391eed6e6b14405ca2a88201290c828e
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1402 (2024)
This study employed atomic layer deposition (ALD) to fabricate an Al2O3 passivation layer to optimize the performance of ultraviolet (UV) photodetectors with a TiO2-nanorod-(NR)-containing active layer and a solid–liquid heterojunction (SLHJ). To r
Externí odkaz:
https://doaj.org/article/9b1babe91de041ef9ec920b7025c6d54
Publikováno v:
Applied Sciences, Vol 14, Iss 18, p 8166 (2024)
This study investigates a hybrid microelectromechanical system (MEMS) acoustic resonator through a hybrid approach to combine capacitive and piezoelectric transduction mechanisms, thus harnessing the advantages of both transducer technologies within
Externí odkaz:
https://doaj.org/article/9b747e2c70ac4229b1bd2df79b0806bb
Publikováno v:
Crystals, Vol 14, Iss 8, p 673 (2024)
Silicon has dimensional limitations in following Moore’s law; thus, new 2D materials complementing Silicon are being researched. Molybdenum disulfide (MoS2) is a prospective material anticipated to bridge the gap to complement Silicon and enhance t
Externí odkaz:
https://doaj.org/article/6752a034fa0b496bb2c300f3c4e04ffc
Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor
Autor:
Mathias Franz, Mahnaz Safian Jouzdani, Lysann Kaßner, Marcus Daniel, Frank Stahr, Stefan E. Schulz
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 14, Iss 1, Pp 951-963 (2023)
In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma. For this precursor an
Externí odkaz:
https://doaj.org/article/82e156ae26c543a2afd135994b8163b5
Autor:
Mohd Zahid Ansari, Iftikhar Hussain, Debananda Mohapatra, Sajid Ali Ansari, Reza Rahighi, Dip K Nandi, Wooseok Song, Soo‐Hyun Kim
Publikováno v:
Advanced Science, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Atomic layer deposition (ALD) has become the most widely used thin‐film deposition technique in various fields due to its unique advantages, such as self‐terminating growth, precise thickness control, and excellent deposition quality. In
Externí odkaz:
https://doaj.org/article/0a2183a17d4b47ea8686a79b1fb653b4
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Molecular layer deposition (MLD) is an incredibly powerful and flexible tool for designing completely new materials with novel and unique properties. The low temperature layer‐by‐layer approach and the use of highly reactive reactants al
Externí odkaz:
https://doaj.org/article/df46fd06e98944ef927674867b74660f
Publikováno v:
Journal of Information Display, Vol 24, Iss 2, Pp 119-125 (2023)
By comparing Ni and ITO electrodes of SnO TFT, we find a facile method to control p-type SnO TFT performance. A Ni-electrode TFT has a high field-effect mobility of 3.3 cm2/Vs and a low on/off current ratio of 3.6 × 101. Compared to Ni, ITO-electrod
Externí odkaz:
https://doaj.org/article/109cfa94185248f894adb291f2800fcf
Publikováno v:
Materials Research Express, Vol 11, Iss 1, p 015902 (2024)
Being an important semiconductor material for high power applications, silicon carbide (SiC) faces the problems while used as a gate oxygen layer in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work t
Externí odkaz:
https://doaj.org/article/b2f58bbdb9d943d79ce4ff421438caa3