Zobrazeno 1 - 10
of 75
pro vyhledávání: '"and James E. Maslar"'
Publikováno v:
J Appl Phys
We investigate the use of Raman spectroscopy to measure carrier concentrations in [Formula: see text] GaSb epilayers to aid in the development of this technique for the nondestructive characterization of transport properties in doped semiconductors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9ff8313d8d1c7d16ebefd8b1b8b4e95
https://europepmc.org/articles/PMC10190161/
https://europepmc.org/articles/PMC10190161/
Atomic Layer Deposition of Al2O3 Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle
Publikováno v:
The Journal of Physical Chemistry C. 124:3410-3420
Atomic layer deposition (ALD) of Al2O3 using trimethylaluminum and H2O is known to proceed through sequential surface reactions that leave the surface alternately terminated with AlCH3 and OH groups. Using in situ reflection–absorption infrared spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::739636fa9a7df249cbb6682d4b3beb9e
https://doi.org/10.1021/acs.jpcc.9b11291
https://doi.org/10.1021/acs.jpcc.9b11291
Autor:
Berc, Kalanyan, Ryan, Beams, Michael B, Katz, Albert V, Davydov, James E, Maslar, Ravindra K, Kanjolia
Publikováno v:
J Vac Sci Technol A
Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS(2) rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::889bb59394b778bc469f8d6589fe680e
https://pubmed.ncbi.nlm.nih.gov/33281278
https://pubmed.ncbi.nlm.nih.gov/33281278
Autor:
James E. Maslar, William A. Kimes, Albert V. Davydov, Ryan Beams, Elias Garratt, Berc Kalanyan, Ravindra K. Kanjolia, Stephan J. Stranick, Irina Kalish
Publikováno v:
Chemistry of Materials. 29:6279-6288
High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a783bc9515c2a82a93b97437611fbe5
https://doi.org/10.1021/acs.chemmater.7b01367
https://doi.org/10.1021/acs.chemmater.7b01367
Publikováno v:
Applied Spectroscopy. 71:2632-2642
A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso μ2-η2-(tBu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9203f8e4980e28361b0e3d674c8b916
https://doi.org/10.1177/0003702817716939
https://doi.org/10.1177/0003702817716939
Publikováno v:
Applied spectroscopy. 74(10)
A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes. The nondispersive infrared analyzer was designed to simultaneously measure the partial press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d54348a2b0e2ec876e87d29de7785179
https://pubmed.ncbi.nlm.nih.gov/31617384
https://pubmed.ncbi.nlm.nih.gov/31617384
Publikováno v:
J Res Natl Inst Stand Technol
Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7eaad7fe5c7a6ada9de3444f8303657c
https://pubmed.ncbi.nlm.nih.gov/34877167
https://pubmed.ncbi.nlm.nih.gov/34877167
Publikováno v:
Journal of Vacuum Science & Technology A. 39:012403
Low volatility precursors are widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Compared to gases and high volatility liquid precursors, delivery of low volatility liquid and solid precursors can be probl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262814d70c4ec582f73617788ae4eef4
https://doi.org/10.1116/6.0000676
https://doi.org/10.1116/6.0000676
Autor:
Berc, Kalanyan, William A, Kimes, Ryan, Beams, Stephan J, Stranick, Elias, Garratt, Irina, Kalish, Albert V, Davydov, Ravindra K, Kanjolia, James E, Maslar
Publikováno v:
Chemistry of materials : a publication of the American Chemical Society. 29(15)
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5a1560798e884ad32dcb3e49c6eb608a
https://pubmed.ncbi.nlm.nih.gov/29545674
https://pubmed.ncbi.nlm.nih.gov/29545674
Autor:
Xuelei Liang, James E. Maslar, Brent A. Sperling, Angela R. Hight Walker, Guangjun Cheng, Irene Calizo, Curt A. Richter, Wei Li, Aaron C. Johnston-Peck
Publikováno v:
Carbon. 76:257-265
We present an investigation on the carbon scrolls produced from chemical vapor deposition (CVD) grown graphene. A wet, polymer-mediated process is used to transfer CVD grown graphene from copper foil to a Si/SiO2 or metal substrate. Upon the removal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b5f81cd95c639ee0e8edf842a29f6cc
https://doi.org/10.1016/j.carbon.2014.04.076
https://doi.org/10.1016/j.carbon.2014.04.076